#Power Trench Mosfet

[hrket2ton]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/fdd16an08a0-onsemi-1829456

Mosfet module, Surface Mount Enhancement Mode Power MosFet, mosfet gate,

N-Channel 75 V 50 A 16 mOhm Surface Mount PowerTrench Mosfet TO-252AA

[futureelectronic1119]

ROHM's SiC Power and Gate Driver Solutions

https://www.futureelectronics.com/m/rohm. Optimize your designs with SiC power devices and gate drivers from ROHM, the pioneer and industry leader in SiC technology. Combining SiCproducts, such as ROHM’s new high voltage trench-type MOSFETs featuring separate driver and power source pins to minimize switching loss. https://youtu.be/eKAmcAaomFE

[jell2nouur]

https://www.futureelectronics.com/p/semiconductors--discretes--transistors--mosfets/irfr3607trpbf-infineon-6174095

Surface Mount Trench Power MOSFET, MOSFET transistors, ic mosfet

Single N-Channel 75 V 9 mOhm 84 nC HEXFET® Power Mosfet - TO-252-3

[chetanagp]

Trench Gate Power MOSFET Market is expected to grow at a CAGR of 5.74% during the forecast period. Global Trench Gate Power MOSFET Market is expected to reach US$ 3.02 Bn. by 2029.

[vbsemi-mosfet]

VBE2610N MOSFET In the sweeping robot and the vacuum cleaner:Intelligent control and efficient drive

In order to make the sweeping robot really play a role, intelligent control and efficient driving are very important. In the design and application of the sweeping robot (EV) vacuum cleaner, the selection of the right MOSFET is the key. As one of the core components of the sweeping robot vacuum cleaner, the performance of MOSFET directly affects the charging efficiency, system stability and the long life of the equipment. Our MOSFET product, VBE2610N- -VB-semi, is widely used in this scheme because of its low on resistance and high threshold voltage, high efficiency and high reliability. It provides stable and reliable power support for these components, ensures the efficient operation of the robot in a variety of complex environments, and improves the cleaning effect and intelligence level.

Power management system:

As a kind of intelligent home appliance, the sweeping robot contains a complex circuit system inside, among which the power management module is very important. MOSFET Can be used as the core element of the regulator in the power switch module, VBE2610N high performance and low on resistance characteristics make it very suitable for the sweeping robot and vacuum cleaner power management module, through the accurate control of the current and voltage, to achieve the stable output of the circuit. It can provide efficient electricity conversion and stable current output, thus extending the battery use time and improving the overall energy efficiency of the equipment.

Intelligent control:

In the sweeping robot, intelligent control functions such as path planning, automatic obstacle avoidance, intelligent scheduling and so on all need high-precision circuit control. VBE2610N The high reliability and stability make it a key component of these intelligent control functional circuits, which can ensure that the sweeping robot can achieve efficient cleaning and intelligent operation in a variety of complex environments

Efficient drive:

Sweeping robots are usually equipped with motor drive components such as the main brush and side brush, which require precise current and voltage control to achieve efficient cleaning effect. VBE2610N Has high voltage resistance, can work steadily in high voltage environment, ensure the safety and reliability of electric tools, and reduce the power loss and improve the power density, VBE2610N high current carrying capacity and stable voltage control ability make it the ideal choice in the motor drive circuit, to ensure that the motor under a kinds of load conditions can run operation, provide stable power output.

Applications in other areas

In the wireless communication equipment power amplifier module：

VBE2610N Using trench process manufacturing, with low conduction resistance and high current processing capacity, with high efficiency, high reliability and high current processing capacity, making VBE2610N become one of the indispensable electronic components in wireless communication equipment, help to improve the performance and reliability of the whole system.

In the LED lighting drive

VBE2610N As an MOSFET suitable for high-power applications, it shows significant advantages in LED lighting drivers. It can not only provide accurate power control, through adjusting the conduction state to adjust the LED light intensity, meet the demand of diversified lighting, also because of its low conduction resistance and achieve high efficiency conversion, reduce power loss, its TO252 packaging form easy to integrate and encapsulation, save space, improve the compactness of lighting system and stable stability and extend the service life.

Product Parameter

Product model number: VBE2610N

Polarity: P channel

drain-source voltage (VDS):60V 

Grid source voltage (VGS): ± 20V

Threshold voltage (Vth):1.7V

On-on resistance (RDS(on)@VGS=4.5V): 72m Ω

On-on resistance (RDS (on) @ VGS = 10 V): 61mΩ

Maximum drain current:30A

Technology: groove(groove type)

Package: SOT 252

VBE2610N MOSFET—VB-semi has the characteristics of low on resistance and high threshold voltage, high efficiency, high reliability, widely used in sweeping robot and vacuum cleaner, can also be used in voltage regulator, power switch module and other fields. Such as the power amplifier module, LED lighting driver in the wireless communication equipment. Its low threshold voltage and large rated leakage electrode current also make it an ideal choice for home appliance control module, industrial motor controller and other fields. VBE2610N Can improve the performance and competitiveness of its products, to bring users a better use experience and more high-quality, efficient and reliable products.

[smartenergysolutions]

Shining Light on Solar LED Systems: Efficient, Eco-Friendly Illumination Solutions

With energy costs skyrocketing, there’s a growing need for sustainable solutions. Solar LED lighting is one such innovation, providing illumination without the need for an external power source.

Unlike utility power, which requires trenching and wiring or diesel generators that emit air pollution, solar LED systems are simple to install and operate. Here’s how they work.

Solar Panels

The solar panel is the heart of the system, converting sunlight into electricity for LED lights. A solar panel is composed of a semiconductor material, silicon. Photons strike the upper layer of the silicon, causing it to absorb energy and generate DC power. A lower layer of silicon infused with boron maintains a positive charge, channeling electrons into a conductive metal frame and out of the panel.

A charge controller regulates the flow of electricity between the solar panels and batteries, ensuring optimal performance and battery life. Voltage regulators ensure the LED bulbs operate on the same voltage as the solar panel, preventing them from draining the batteries during nighttime operation.

By combining solar cells and LED lighting technologies, solar efficient Led solutions offer cost savings and environmental benefits. The reduced reliance on non-renewable energy sources also reduces our carbon footprint, contributing to a greener future. Embracing these sustainable methods helps us combat the current climate crisis.

LED Lights

LED lights are a popular choice for both home and business lighting. They use very little energy to generate bright illumination, and they also stay cooler to the touch than traditional bulbs. They also have an impressive lifespan.

When used in conjunction with solar panels, these eco-friendly lights are a perfect option for outdoor spaces. They can be installed without the need for trenching or extensive wiring, and they don’t rely on fossil fuels. They also create zero air and noise pollution.

Additionally, LEDs emit very little infrared light and almost no UV radiation. This makes them ideal for safely illuminating items that may be damaged by exposure to heat. They are also safe to use around flammable materials. Additionally, they do not contain any toxic chemicals that can be harmful to the environment.

Batteries

Batteries convert chemical energy directly to electrical energy. The difference in cohesive[16] and bond energies of metals or oxides undergoing an electrochemical redox reaction provides the electrical energy. These batteries are often used in devices where consistent power is needed for a short period of time, and when recharging is either not possible or not practical: smoke detectors, remote controls. They are also used for backup power in case of an outage. Various types are available, such as lead-acid, nickel-cadmium, and lithium-ion.

Charge Controller

Acting as the system’s brain, a charge controller regulates the flow of electricity between solar panels and batteries. This prevents overcharging and ensures battery performance and longevity.

A good solar charge controller will automatically monitor the battery voltage and current, as well as provide indications of low condition, overcharging or overloading. It will also have a MOSFET switch that allows it to bypass the solar panel output and supply power directly to the load in case of low or overvoltage.

It’s important to select a solar charge controller that’s rated for the maximum array wattage and battery voltage in your installation. It should also be rated for 25% more amps than your array will actually put out – this is to make sure it can handle any unexpectedly bright weather conditions. Two common types of solar charge controllers include MPPT and PWM. MPPT controllers are the most efficient, while PWM controllers are simpler and more affordable.

[suvsystemltd]

The SOT-323 package houses an N-channel enhancement mode Field-Effect #Transistor (FET) leveraging the brilliance of Trench MOSFET technology. Don't let its diminutive size fool you; this little component is a powerhouse when it comes to surface-mounted applications. Utilizing cutting-edge #technology, it ensures efficient performance in a small form factor, fitting snugly onto PCBs.

Features

👉🏻Seamlessly integrates into digital logic circuits, ensuring compatibility across various systems.

👉🏻The package delivers with lightning-fast switching capabilities.

👉🏻 Harnessing trench MOSFET technology for peak performance and reliability.

👉🏻Meets AEC-Q101 standards, making it suitable for automotive applications and beyond.

Applications

👉🏻Relay Driver

👉🏻High-Speed Line Driver

👉🏻Low-Side Load Switch

👉🏻Switching Circuits

In a world where electronics are becoming increasingly compact yet powerful, the SOT-323 package stands tall as a testament to innovation and efficiency. With its impressive features, reliability, and versatile applications, it's a cornerstone in modern electronic design. So, whether you're designing the next-generation automotive system, revolutionizing communication networks, or optimizing power management solutions, consider the SOT-323 package for your next project.

SUV System Ltd. offers the SOT-323 at the most #competitive prices without compromising on quality.

Our products are #affordable, #reliable, and designed to meet your needs.

Partner with SUV System Ltd and discover the difference that quality #electroniccomponents can make in your designs. Join countless #satisfiedcustomers who rely on us for all their #electroniccomponent needs. Order now and enjoy #fastshipping.

Reach out to us at sales@suvsystem.com or connect with us on Skype at sales@suvsystem.com

Or learn more at https://www.suvsystem.com/

[chetanagp]

Trench Gate Power MOSFET Market is expected to grow at a CAGR of 5.74% during the forecast period. Global Trench Gate Power MOSFET Market is expected to reach US$ 3.02 Bn. by 2029.

[vbsemi-mosfet]

VBI1322 MOSFETs in Automotive Body Control: Enhancing Function Management and User Experience

Body Control System:

The body control system is responsible for managing and controlling the electrical devices inside and outside the vehicle, including features such as headlights, wipers, mirrors, seats, and windows. The efficient and stable operation of this system directly affects driving safety and the level of vehicle intelligence. MOSFETs play a crucial role in body control systems, enhancing the system's functionality management and improving user experience.

1. Precise Power Control

The VBI1322 MOSFET provides precise power control, ensuring stable power delivery to in-vehicle devices, such as seat heaters and window lifts. Its low on-resistance (30mΩ at VGS=2.5V and 22mΩ at VGS=4.5V) improves efficiency and reduces energy loss.

2. Load Switching and Management

The VBI1322 can quickly switch the operational state of various loads, supporting flexible control of functions such as seat heating and window lifting. With a maximum drain current of 6.8A, it meets the power requirements of most automotive electrical devices.

3. Fault Protection Mechanism

In a body control system, electrical devices may suffer damage due to overcurrent, overheating, or other faults. The VBI1322 MOSFET can swiftly disconnect the power supply to protect the circuit from damage.

4. Headlight Control

The VBI1322 MOSFET is suitable for controlling low-power headlights, such as interior lighting or low-power exterior lights. Its stable current control helps prevent current fluctuations from affecting the system, ensuring reliable operation of the headlights and improving driving safety.

Product Specifications:

Model: VBI1322

Brand: VBsemi

Type: Single N-Channel MOSFET

Rated Drain-Source Voltage (VDS): 30V

Rated Gate-Source Voltage (VGS): 20V

Threshold Voltage (Vth): 1.7V

Drain-Source On-Resistance (Rds(on)) at VGS=2.5V: 30mΩ

Drain-Source On-Resistance (Rds(on)) at VGS=4.5V: 22mΩ

Maximum Drain Current (ID): 6.8A

Technology: Trench (Trench Type)

Package: SOT89

The VBI1322 MOSFET, with its low on-resistance, moderate drain current capacity (6.8A), and low threshold voltage (Vth = 1.7V), is particularly suitable for low and medium-power body control applications, such as seat heaters, window lifts, and interior lighting. It provides precise power control, efficient load switching, and stable current transmission, ensuring efficient operation and system safety in automotive body control systems.

[lanshengic]

Infineon and INFY Power join forces to expand new energy vehicle charging market

【Lansheng Technology Information】Silicon carbide-based power semiconductors have many advantages such as high efficiency, high power density, high withstand voltage and high reliability, creating opportunities to realize new applications and promote technological innovation in charging stations. Recently, Infineon Technologies AG recently announced a cooperation with INFY Power, China’s leader in the new energy vehicle charging market. Infineon will provide INFY Power with industry-leading 1200 V CoolSiC™ MOSFET power semiconductor devices to improve the efficiency of electric vehicle charging stations.

Dr. Peter Wawer, President of Infineon's Zero Carbon Industrial Power Division, said: "The cooperation between Infineon and INFY Power in the field of electric vehicle charging solutions will provide excellent system-level technology solutions for the local electric vehicle charging industry. It will Dramatically improve charging efficiency, speed up charging, and create a better user experience for electric vehicle owners."

Qiu Tianquan, President of Infineon China, said: “By cooperating with Infineon, which has been continuously improving in the field of SiC products for more than 20 years and has strong integrated technology capabilities, Infineon will use the most advanced product processes and design solutions to Continue to consolidate and maintain its technological leadership in the industry. We can also set a new benchmark for the charging efficiency of new energy vehicle DC charging solutions, thereby creating more convenience and unique value for customers and promoting the development of the electric vehicle charging industry. healthy growth."

Due to its high power density, SiC is suitable for developing high-performance, lightweight and compact charging solutions, which is particularly beneficial for superchargers and ultra-compact wall-mounted DC charging piles. SiC technology can increase the efficiency of electric vehicle charging stations by 1% compared to traditional silicon technology, thereby reducing energy consumption and operating costs. Taking a 100 kW charging station as an example, this means saving 1 kWh of electricity, saving 270 euros in annual costs, and reducing 3.5 tons of carbon emissions. This will greatly promote the application of SiC power devices in electric vehicle charging modules.

As one of the first SiC power semiconductor manufacturers to use trench gate technology for transistors, Infineon has introduced advanced designs that help improve the reliability of charging solutions. These devices feature high threshold voltages and simplify gate drive. CoolSiC MOSFET technology has passed the marathon stress test and the gate voltage jump stress test before being launched on the market, and is regularly monitored after the launch to ensure the highest gate reliability.

By using Infineon's 1200 V CoolSiC MOSFET, Infineon's 30 kW DC charging module can achieve a wide constant power range, high power density, minimal electromagnetic radiation and interference, high protection performance and high reliability. This allows it to not only meet the fast charging needs of most electric vehicles, but also achieve 1% greater efficiency than other solutions on the market. This helps to significantly reduce energy consumption and carbon emissions, reaching world-leading levels.

Lansheng Technology Limited, which is a spot stock distributor of many well-known brands, we have price advantage of the first-hand spot channel, and have technical supports. 

Our main brands: STMicroelectronics, Toshiba, Microchip, Vishay, Marvell, ON Semiconductor, AOS, DIODES, Murata, Samsung, Hyundai/Hynix, Xilinx, Micron, Infinone, Texas Instruments, ADI, Maxim Integrated, NXP, etc

To learn more about our products, services, and capabilities, please visit our website at http://www.lanshengic.com

[futureelectronic1527]

https://www.futureelectronics.com/m/rohm. Optimize your designs with SiC power devices and gate drivers from ROHM,  the pioneer and industry leader in SiC technology. Combining SiCproducts,  such as ROHM’s new high voltage trench-type MOSFETs featuring separate driver and power source pins to minimize switching loss. https://youtu.be/eKAmcAaomFE

[polashislam]

[adsload674]

7426 Mosfet

7426 Mosfet Motor

7426 Mosfet Drive

7426 Mosfet Circuit

7426 Mosfet Power

N-Channel MOSFET D1 G1 S1 N-Channel MOSFET D2 G2 S2 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 40 V Gate-source voltage VGS ± 20 Continuous drain current a TC = 25 °C ID 30 A TC = 125 °C 30 Continuous source current (diode conduction) a IS 30 Pulsed drain current b IDM 120.

AON742630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7426 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V).

Buy the best and latest aon7426 mosfet on banggood.com offer the quality aon7426 mosfet on sale with worldwide free shipping. Shopping Australia. 7426 Datasheet, 7426 PDF, 7426 Data sheet, 7426 manual, 7426 pdf, 7426, datenblatt, Electronics 7426, alldatasheet, free, datasheet, Datasheets, data sheet, datas sheets, databook, free datasheet. AM7426N N-Channel 30-V (D-S) MOSFET: Fairchild Semiconductor: DM7426N Quad 2-Input NAND Gates with High Voltage Open-Collector Outputs: Texas.

Type Designator: AON7426

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 29 W

Maximum Drain-Source Voltage |Vds|: 30 V

7426 Mosfet Motor

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.35 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 44 nC

Rise Time (tr): 4 nS

Drain-Source Capacitance (Cd): 283 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm

Package: DFN3X3EP

7426 Mosfet Drive

AON7426 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AON7426 Datasheet (PDF)

0.1. aon7426.pdf Size:274K _aosemi

AON742630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7426 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

8.1. aon7422e.pdf Size:352K _aosemi

AON7422E30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7422E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

8.2. aon7421.pdf Size:267K _aosemi

7426 Mosfet Circuit

AON742120V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7421 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

7426 Mosfet Power

8.3. aon7422l.pdf Size:164K _aosemi

AON742230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7422 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 40AThis device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

8.4. aon7424.pdf Size:238K _aosemi

AON742430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7424 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

8.5. aon7428.pdf Size:163K _aosemi

AON742830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7428 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

8.6. aon7423.pdf Size:290K _aosemi

AON742320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7423 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

8.7. aon7422g.pdf Size:259K _aosemi

AON7422G30V N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 32A High Current Capability RDS(ON) (at VGS=10V)

Datasheet: AON7412, AON7414, AON7416, AON7418, AON7421, AON7422E, AON7423, AON7424, J111, AON7428, AON7430, AON7432, AON7436, AON7440, AON7444, AON7446, AON7448.

LIST

Last Update

MOSFET: CEZ3R04 | CEZ3P08 | CES2322 | CEB93A3 | CEF9060N | CEB6086 | CEN2321A | CEN2307A | CEM9288 | CEM6056L | CEM4052 | CEM2192 | CEU25N02 | CED25N02 | CEU20N02 | CED20N02

[vbsemi-mosfet]

Applications of VBA2412 and VB2355 MOSFETs in Vehicle Communication Control: Enhancing System Reliability and Data Transmission Security

Vehicle Communication Control The vehicle communication control system is responsible for receiving, processing, and managing various data streams within and outside the vehicle. These include driver identification, real-time vehicle status monitoring, accident information recording and transmission, remote fault diagnosis, and onboard navigation. The efficient and stable operation of vehicle communication control directly impacts vehicle safety and intelligence. In this context, MOSFETs play a crucial role in enhancing system reliability and data transmission security.

Product Specifications

VBA2412:

Operating Voltage (VDS): -40V

Maximum Tolerance Voltage (VGS): 20V

Threshold Voltage (Vth): -2V

On-Resistance at VGS=4.5V: 14mΩ

On-Resistance at VGS=10V: 10mΩ

Maximum Drain Current (ID): 16.1A

VB2355:

Polarity: Single P-Channel

VDS: -30V

Maximum Tolerance Voltage (VGS): 20V

Threshold Voltage (Vth): -1.7V

On-Resistance at VGS=4.5V: 54mΩ

On-Resistance at VGS=10V: 46mΩ

Maximum Drain Current (ID): -5.6A

Technology: Trench

Package: SOT23-3

Application Scenarios

Signal Amplification and Filtering MOSFETs can amplify weak signals, ensuring clear and interference-resistant sensor data transmission.

VBA2412: With low on-resistance (14mΩ at VGS=4.5V, 10mΩ at VGS=10V), it is suitable for high-current signal amplification, enhancing stability.

VB2355: Its higher on-resistance is ideal for low-power signals, performing well in fine data transmission.

High-Speed Switching Control MOSFETs provide rapid switching performance, ensuring real-time response in high-frequency applications.

VBA2412: Its fast response and 16.1A drain current make it suitable for high-frequency, high-power switching, ensuring data transmission in real-time.

VB2355: Designed for low-power, high-speed signal switching, it’s ideal for signal processing in small modules.

Power Management MOSFETs manage power supply according to module requirements, providing stable current and saving energy.

VBA2412: High current capacity supports power management in high-power modules.

VB2355: Performs well in energy-saving mode for small communication modules.

Overcurrent Protection MOSFETs can detect abnormal currents and quickly cut power to prevent communication module damage.

VBA2412: Suitable for overcurrent protection in high-current conditions.

VB2355: Protects low-power devices, preventing damage to small equipment.

Low Power Control MOSFETs reduce energy consumption in low-power modes, extending system standby time.

VBA2412: Ideal for sustained power supply modules with low-power performance in high-power operations.

VB2355: Extends standby time in small systems during low-power mode.

Advantages and Focus of VBA2412 and VB2355 The VBA2412 is more suitable for high-power, high-frequency applications such as signal amplification, fast switching, and overcurrent protection. The VB2355, on the other hand, excels in low-power, low-noise applications, ideal for signal isolation and low-power control. Together, they complement each other in vehicle communication control applications.

The VBA2412 and VB2355 MOSFETs provide robust support for vehicle communication control in modern intelligent connected vehicles, optimizing data processing and power management. They improve system stability and response speed, ensuring effective power and signal management and protection. These components play a crucial role in enhancing the reliability and energy efficiency of communication modules, laying a foundation for communication control in future smart vehicles.

[jfr2fy2tz]

ON Semiconductor FDS4559 in Reel. N/P-Channel 60 V 55/105 mΩ Complementary Power Trench Mosfet - SOIC-8.

[lanshengic]

STMicroelectronics releases 100V industrial-grade STripFET F8 transistor with 40% higher figure of merit

【Lansheng Technology Information】On May 24, STMicroelectronics' STL120N10F8 N-channel 100V power MOSFET has extremely low gate-drain charge (QGD) and on-resistance RDS(on), and the figure of merit (FoM) 40% higher than the previous generation of similar products.

The new MOSFET from STMicroelectronics utilizes ST's STPOWER STripFET F8 advanced technology and introduces an oxide-filled trench process, which combines extremely low conduction loss and low gate charge to achieve high-efficiency switching performance. As a result, the STL120N10F8 has a maximum on-resistance RDS(on) of 4.xn--6m-fcc (at VGS = 10V) and operates efficiently up to 600kHz.

STripFET F8 technology also ensures that the output capacitance value can mitigate the drain-source voltage spike, minimizing charge and discharge energy waste. In addition, the body-drain diode of this MOSFET has a higher softness characteristic. These improvements reduce electromagnetic emissions, simplify compliance testing of the final system, and ensure electromagnetic compatibility (EMC) compliance with applicable product standards.

The STL120N10F8 has excellent energy efficiency and low electromagnetic radiation, which can enhance the power conversion performance of hard-switching and soft-switching topologies. In addition, it is the first STPOWER 100V STripFET F8 MOSFET to fully meet industrial specifications, making it ideal for motor control, power supplies and converters for telecom and computer systems, LED and low-voltage lighting, as well as consumer appliances and battery-operated equipment.

STMicroelectronics' new MOSFETs also have other advantages, including a small difference in gate threshold voltage (VGS(th)), which is useful in high-current applications and simplifies the parallel design of multiple power switches. The robustness of the new product is very strong, able to withstand 800A short-circuit pulse current impact for 10µs.

Lansheng Technology Limited, which is a spot stock distributor of many well-known brands, we have price advantage of the first-hand spot channel, and have technical supports. 

Our main brands: STMicroelectronics, Toshiba, Microchip, Vishay, Marvell, ON Semiconductor, AOS, DIODES, Murata, Samsung, Hyundai/Hynix, Xilinx, Micron, Infinone, Texas Instruments, ADI, Maxim Integrated, NXP, etc

To learn more about our products, services, and capabilities, please visit our website at http://www.lanshengic.com