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lanshengic · 9 months

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Infineon and INFY Power join forces to expand new energy vehicle charging market

【Lansheng Technology Information】Silicon carbide-based power semiconductors have many advantages such as high efficiency, high power density, high withstand voltage and high reliability, creating opportunities to realize new applications and promote technological innovation in charging stations. Recently, Infineon Technologies AG recently announced a cooperation with INFY Power, China’s leader in the new energy vehicle charging market. Infineon will provide INFY Power with industry-leading 1200 V CoolSiC™ MOSFET power semiconductor devices to improve the efficiency of electric vehicle charging stations.

Dr. Peter Wawer, President of Infineon's Zero Carbon Industrial Power Division, said: "The cooperation between Infineon and INFY Power in the field of electric vehicle charging solutions will provide excellent system-level technology solutions for the local electric vehicle charging industry. It will Dramatically improve charging efficiency, speed up charging, and create a better user experience for electric vehicle owners."

Qiu Tianquan, President of Infineon China, said: “By cooperating with Infineon, which has been continuously improving in the field of SiC products for more than 20 years and has strong integrated technology capabilities, Infineon will use the most advanced product processes and design solutions to Continue to consolidate and maintain its technological leadership in the industry. We can also set a new benchmark for the charging efficiency of new energy vehicle DC charging solutions, thereby creating more convenience and unique value for customers and promoting the development of the electric vehicle charging industry. healthy growth."

Due to its high power density, SiC is suitable for developing high-performance, lightweight and compact charging solutions, which is particularly beneficial for superchargers and ultra-compact wall-mounted DC charging piles. SiC technology can increase the efficiency of electric vehicle charging stations by 1% compared to traditional silicon technology, thereby reducing energy consumption and operating costs. Taking a 100 kW charging station as an example, this means saving 1 kWh of electricity, saving 270 euros in annual costs, and reducing 3.5 tons of carbon emissions. This will greatly promote the application of SiC power devices in electric vehicle charging modules.

As one of the first SiC power semiconductor manufacturers to use trench gate technology for transistors, Infineon has introduced advanced designs that help improve the reliability of charging solutions. These devices feature high threshold voltages and simplify gate drive. CoolSiC MOSFET technology has passed the marathon stress test and the gate voltage jump stress test before being launched on the market, and is regularly monitored after the launch to ensure the highest gate reliability.

By using Infineon's 1200 V CoolSiC MOSFET, Infineon's 30 kW DC charging module can achieve a wide constant power range, high power density, minimal electromagnetic radiation and interference, high protection performance and high reliability. This allows it to not only meet the fast charging needs of most electric vehicles, but also achieve 1% greater efficiency than other solutions on the market. This helps to significantly reduce energy consumption and carbon emissions, reaching world-leading levels.

Lansheng Technology Limited, which is a spot stock distributor of many well-known brands, we have price advantage of the first-hand spot channel, and have technical supports.

Our main brands: STMicroelectronics, Toshiba, Microchip, Vishay, Marvell, ON Semiconductor, AOS, DIODES, Murata, Samsung, Hyundai/Hynix, Xilinx, Micron, Infinone, Texas Instruments, ADI, Maxim Integrated, NXP, etc

To learn more about our products, services, and capabilities, please visit our website at http://www.lanshengic.com

#electronic components #semiconductor #chip model #electronic #chip manufacturing #lanshengic

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chetanagp · 2 months

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Trench Gate Power MOSFET Market is expected to grow at a CAGR of 5.74% during the forecast period. Global Trench Gate Power MOSFET Market is expected to reach US$ 3.02 Bn. by 2029.

#Trench Gate Power MOSFET Market

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futureelectronic1527 · 1 year

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https://www.futureelectronics.com/m/rohm. Optimize your designs with SiC power devices and gate drivers from ROHM, the pioneer and industry leader in SiC technology. Combining SiCproducts, such as ROHM’s new high voltage trench-type MOSFETs featuring separate driver and power source pins to minimize switching loss. https://youtu.be/eKAmcAaomFE

#ROHM SiC Power #Gate Driver Solutions

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e-energyit · 2 years

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Common Power MODFET Types and Applications

The full name of MOSFET is Metal-Oxide-Semiconductor Field-Effect Transistor. i.e. Metal-Oxide-Semiconductor Field-Effect Transistor.

First of all, let's understand the application and existence of MOSFETs.

MOSFETs are present in large numbers in CPUs and are power components with low drive power, fast switching speed, high operating frequency, and strong thermal stability, so they are used as amplification circuits or switching circuits. to achieve logic functions, and the number in the CPU is very impressive.

The HUAWEI Kirin 990 5G chip, for example, has a whopping 10.3 billion transistors.

In addition to the large number of MOSFETs in highly integrated CPUs, they are widely used in sound amplification, circuit power supply, and power systems. Depending on the application of MOSFETs, there are differences in both the way they exist and how they work.

https://energy-sale-images.oss-cn-hongkong.aliyuncs.com/sale_images/k7v64gtqtsbb2xwt9izk.jpg

Infineon's power MOSFETs, for example, the following figure is a 40 V StrongIRFET™ power MOSFET in D2PAK 7pin, used in high-current batteries, which are present in a discrete individual manner, the size of a single MOSFET in the order of cm, the size of a single MOSFET in the CPU in the order of nm, and the previously introduced the CPU-MOSFETs are different.

MOSFETs in different fields have different forms, and their circuits act as different roles and principles, MOSFEs in CPUs and power systems mainly act as electronic switches, and in sound amplification, MOSFETs act mainly as amplifier elements for analog signals.

At the same time, the internal device structure of MOSFETs in small power and high-power devices are also different, in small power MOSFETs, S and D is horizontal, in high-power devices, S and D is generally vertical, so that the purpose of the design is mainly to meet the requirements of high voltage power systems.

https://energy-sale-images.oss-cn-hongkong.aliyuncs.com/sale_images/i0k96swu8zslp3ms97v4.jpg

Low Power Horizontal SD MOSFET

https://energy-sale-images.oss-cn-hongkong.aliyuncs.com/sale_images/bmepkq8zqci7d3hj9zoi.jpg

High Power Vertical SD MOSFET

Depending on the polarity of their "channels" (working carriers), they can be divided into two types of "N-type" and "P-type", often called NMOSFETs and PMOSFETs Other abbreviations include NMOS, PMOS, etc.

Mosfet is mainly used in high frequency and low-voltage low-power aspects, different types of MOSFET voltage performance, the range is not the same.

Currently, the mainstream power MOSFET types on the market mainly include: due to changes in technology to form the internal structure of different Planar, Trench, Lateral, SuperJunction, Advanced Trench, as well as due to material iterations of the formation of semiconductor material changes in SiC, GaN. Although material iterations and technological changes are parallel, such as the existence of GaN Lateral MOSFETs, for the time being, the performance of all available wide-band MOSFETs is mainly determined by material performance, as wide-band semiconductors are still in the initial stage of development, so all different structures of GaN MOSFETs and SiC MOSFETs are grouped into one whole.

MOSFET TYPE

System Application Characteristics

Application Area

Planar

Low operating frequency/better voltage resistance

Voltage Regulators

Lateral

Low capacitance/high operating frequency

Audio Equipment

Trench

Low on-resistance/average voltage resistance

Switching Power Supplies

Super Junction

Improved voltage resistance and output power based on Trench

Industrial Lighting

Advanced Trench

Increase operating frequency based on Trench

Communication social security

SiC

Low power consumption / highest output power / best voltage withstand

Automotive Electronics

Gan

Good voltage withstand / high output power/ highest operating frequency

Automotive Electronics

Benefiting from the electrification of the world, information technology and the pursuit of higher performance of the electricity end-use, the global market size of power MOSFETs is expected to reach $ billion 85 in 2022. The power semiconductor industry is a demand-driven industry, so the market space for the power MOSFET industry is mainly derived from the market space for power devices with an operating frequency of 10kHz or more and an output power of 5kW or less for the industry.

Industry Type

Application Areas

Display Devices

Cameras/Audio devices

Wireless devices

Mobile phones/wearable devices

Household appliances

Washing machine/air conditioner/refrigerator

Medical Equipment

Blood glucose meter / MRI

Automotive Electronics

Motor controller/inverter

Industrial Applications

Uninterruptible power supply/solar inverter

Computing and Storage

Computer/Server/Data Center

Network Communication

Modem / Broadband network / Cellular network

The main growth drivers of these eight industries are mainly derived from three trends: the trend of electrification, the trend of information technology and the trend of the pursuit of higher performance of electricity terminals.

The electrification trend mainly affects the automotive electronics and industrial industries, the electrification of the automotive industry is undoubtedly the most significant feature of the world's electrification today, which is derived from both the automotive industry's annual global production and sales volume of nearly 100 million, but also from the automotive electrification 3-4 times the size of the power semiconductor usage growth; and industry is mainly due to the overall increase in electricity consumption brought about by electrification, thus driving including power The industry is mainly due to the electrification of the overall increase in electricity consumption, thus driving the growth of the power transmission industry, including power supplies, solar inverters, etc.

Information technology trends mainly affect wireless devices, computing storage and network communications in these three industries, in terms of future trends in the world, whether it is the Internet of Things or AI, in essence, are inseparable from a greater degree of data collection, computing and transmission, and the increase in the amount of data, will bring about an increase in electricity consumption and power equipment, thereby increasing the market space for these devices will be used mainly in power MOSFETs .

The automotive industry in the past two years happens to be a very good observer, because the automotive industry is very concerned about safety, so the consistency of the components and pass rate has very high requirements, usually a qualified product still needs to undergo 1-2 years of verification cycle. This is why the automotive industry has high performance requirements and demand for products that can only be produced by leading manufacturers, but some of them are using mid-range power MOSFETs - the automotive industry uses power MOSFETs that have naturally moved down from the high-end level to the mid-range level.

With the rapid development of new energy vehicles, MOSFET demand has surged. mosfet is the core component in automotive electronics, automotive engines, drive systems in the transmission controller, as well as braking, steering control, are inseparable from the mosfet. and in traditional fuel vehicles auxiliary brakes, power steering and seat control systems, are required to use the motor, with the growth in the number of traditional vehicles built-in motor The market growth of MOSFETs is also driven by the growth of the number of built-in motors in conventional vehicles.

Prepare your supply chain

Buyers of electronic components must now be prepared for future prices, extended delivery time, and continuous challenge of the supply chain. Looking forward to the future, if the price and delivery time continues to increase, the procurement of JIT may become increasingly inevitable. On the contrary, buyers may need to adopt the "just in case" business model, holding excess inventory and finished products to prevent the long -term preparation period and the supply chain interruption.

As the shortage and the interruption of the supply chain continue, communication with customers and suppliers will be essential. Regular communication with suppliers will help buyers prepare for extension of delivery time, and always understand the changing market conditions at any time. Regular communication with customers will help customers manage the expectations of potential delays, rising prices and increased delivery time. This is essential to ease the impact of this news or at least ensure that customers will not be taken attention to the sudden changes in this chaotic market.

Most importantly, buyers of electronic components must take measures to expand and improve their supplier network. In this era, managing your supply chain requires every link to work as a cohesive unit. The distributor of the agent rather than a partner cannot withstand the storm of this market. Communication and transparency are essential for management and planning. In E-energy Holding Limited, we use the following ways to hedge these market conditions for customers:

Our supplier network has been reviewed and improved for more than ten years.

Our strategic location around the world enables us to access and review the company's headquarters before making a purchase decision.

E-energy Holding Limited cooperates with a well -represented testing agency to conduct in -depth inspections and tests before delivering parts to our customers.

Our procurement is concentrated in franchise and manufacturer direct sales.

Our customer manager is committed to providing the highest level of services, communication and transparency. In addition to simply receiving orders, your customer manager will also help you develop solutions, planned inventory and delivery plans, maintain the inventory level of regular procurement, and ensure the authenticity of your parts.

Add E-energy Holding Limited to the list of suppliers approved by you, and let our team help you make strategic and wise procurement decisions.

#e-energy #MODFET

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millenniumsemi · 2 years

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Where Are SiC MOSFETs Used?

MOSFETs have been the most popular technology from the start and are mainly used for switching tasks in power converters. SiC power MOSFETs have a construction comparable to Si MOSFETs with an insulated gate structure. Due to the device's smaller size and lower on-resistance compared to its Si equivalent, SiC power MOSFETs may function over a broad blocking voltage range with lower conduction and switching loss.

The fundamental benefit of SiC power MOSFETs is that they combine SiC's superior material qualities, which improve the device's performance. Depending on how the gate and drift area are structurally modified, SiC Power MOSFETs can be divided into many types.

Planar MOSFETs (DMOSFETs) and trench MOSFETs are the two fundamental types of SiC MOSFET architectures based on gate modification (UMOSFETs). Super junction MOSFETs (SJ MOSFETs) and conventional MOSFETs are further classifications for flat types.

The primary benefit of SiC MOSFETs is that they may be used to reduce tail current during switching, which results in faster operation, lower switching loss, and higher stabilization. Additionally, it has a smaller chip size and lowers ON resistance, which results in less capacitance and gate charge. SiC displays better material qualities than Silicon (Si)-based electronics. Compared to Silicon (Si) devices, where the ON resistance with increased temperature can more than double, SiC devices' minimal ON-resistance increases, allowing for better package downsizing and energy savings.

MillenniumSemi is one of the best SiC MOSFETs manufacturer in Pune and Pimpri Chinchwad. You can visit our official website - millenniumsemi.com for complete information!

#SiC MOSFETs #sic mosfet distributor

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polashislam · 4 years

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#translator maximum operating frequency Power Trench Mosfet

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lanshengic · 10 months

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STMicroelectronics releases 100V industrial-grade STripFET F8 transistor with 40% higher figure of merit

【Lansheng Technology Information】On May 24, STMicroelectronics' STL120N10F8 N-channel 100V power MOSFET has extremely low gate-drain charge (QGD) and on-resistance RDS(on), and the figure of merit (FoM) 40% higher than the previous generation of similar products.

The new MOSFET from STMicroelectronics utilizes ST's STPOWER STripFET F8 advanced technology and introduces an oxide-filled trench process, which combines extremely low conduction loss and low gate charge to achieve high-efficiency switching performance. As a result, the STL120N10F8 has a maximum on-resistance RDS(on) of 4.xn--6m-fcc (at VGS = 10V) and operates efficiently up to 600kHz.

STripFET F8 technology also ensures that the output capacitance value can mitigate the drain-source voltage spike, minimizing charge and discharge energy waste. In addition, the body-drain diode of this MOSFET has a higher softness characteristic. These improvements reduce electromagnetic emissions, simplify compliance testing of the final system, and ensure electromagnetic compatibility (EMC) compliance with applicable product standards.

The STL120N10F8 has excellent energy efficiency and low electromagnetic radiation, which can enhance the power conversion performance of hard-switching and soft-switching topologies. In addition, it is the first STPOWER 100V STripFET F8 MOSFET to fully meet industrial specifications, making it ideal for motor control, power supplies and converters for telecom and computer systems, LED and low-voltage lighting, as well as consumer appliances and battery-operated equipment.

STMicroelectronics' new MOSFETs also have other advantages, including a small difference in gate threshold voltage (VGS(th)), which is useful in high-current applications and simplifies the parallel design of multiple power switches. The robustness of the new product is very strong, able to withstand 800A short-circuit pulse current impact for 10µs.

Lansheng Technology Limited, which is a spot stock distributor of many well-known brands, we have price advantage of the first-hand spot channel, and have technical supports.

To learn more about our products, services, and capabilities, please visit our website at http://www.lanshengic.com

#electronic components #semiconductor #chip model #electronic #chip manufacturing #lanshengic

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adsload674 · 3 years

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7426 Mosfet

7426 Mosfet Motor

7426 Mosfet Drive

7426 Mosfet Circuit

7426 Mosfet Power

N-Channel MOSFET D1 G1 S1 N-Channel MOSFET D2 G2 S2 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-source voltage VDS 40 V Gate-source voltage VGS ± 20 Continuous drain current a TC = 25 °C ID 30 A TC = 125 °C 30 Continuous source current (diode conduction) a IS 30 Pulsed drain current b IDM 120.

AON742630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7426 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V).

Buy the best and latest aon7426 mosfet on banggood.com offer the quality aon7426 mosfet on sale with worldwide free shipping. Shopping Australia. 7426 Datasheet, 7426 PDF, 7426 Data sheet, 7426 manual, 7426 pdf, 7426, datenblatt, Electronics 7426, alldatasheet, free, datasheet, Datasheets, data sheet, datas sheets, databook, free datasheet. AM7426N N-Channel 30-V (D-S) MOSFET: Fairchild Semiconductor: DM7426N Quad 2-Input NAND Gates with High Voltage Open-Collector Outputs: Texas.

Type Designator: AON7426

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 29 W

Maximum Drain-Source Voltage |Vds|: 30 V

7426 Mosfet Motor

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.35 V

Maximum Drain Current |Id|: 40 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 44 nC

Rise Time (tr): 4 nS

Drain-Source Capacitance (Cd): 283 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm

Package: DFN3X3EP

7426 Mosfet Drive

AON7426 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

AON7426 Datasheet (PDF)

0.1. aon7426.pdf Size:274K _aosemi

AON742630V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7426 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

8.1. aon7422e.pdf Size:352K _aosemi

AON7422E30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7422E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

8.2. aon7421.pdf Size:267K _aosemi

7426 Mosfet Circuit

AON742120V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7421 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

7426 Mosfet Power

8.3. aon7422l.pdf Size:164K _aosemi

AON742230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7422 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 40AThis device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

8.4. aon7424.pdf Size:238K _aosemi

AON742430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7424 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 40Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V)

8.5. aon7428.pdf Size:163K _aosemi

AON742830V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON7428 uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 50AThis device is ideal for load switch and battery protection RDS(ON) (at VGS=10V)

8.6. aon7423.pdf Size:290K _aosemi

AON742320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AON7423 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-4.5V) -50Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-4.5V)

8.7. aon7422g.pdf Size:259K _aosemi

AON7422G30V N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V Optimized for Load Switch ID (at VGS=10V) 32A High Current Capability RDS(ON) (at VGS=10V)

Datasheet: AON7412, AON7414, AON7416, AON7418, AON7421, AON7422E, AON7423, AON7424, J111, AON7428, AON7430, AON7432, AON7436, AON7440, AON7444, AON7446, AON7448.

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jfr2fy2tz · 4 years

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ON Semiconductor FDS4559 in Reel. N/P-Channel 60 V 55/105 mΩ Complementary Power Trench Mosfet - SOIC-8.

#Transistors Mosfets FDS4559 ON Semiconductor mosfet switch circuit mosfet gate High voltage level translator Digital transistor Types of Log

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mendez26e · 2 years

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#Transistors #FDN335N #Digital transistor #Digital transistor manufacturers

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gonzalez68e · 2 years

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#Transistors #FDMC3612 #maximum operating frequency #High voltage level translator

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e-energyit · 2 years

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Summary of commonly used power semiconductor devices|E-energy

Summary of commonly used power semiconductor devices

1.MCT(MOS Controlled Thyristor)

MCT is a new MOS and bipolar composite device. As shown in the figure above, MCT is a high impedance MOSFET, low drive figure MCT power, fast switching speed characteristics and SCR high voltage, high current characteristics combined together to form a high power, high voltage, fast full control type devices. In essence, MCT is a MOS gate-controlled SCR, which can be turned on or off by adding a narrow pulse to the gate, and it consists of numerous single cells in parallel.

2.IGCT (Integrated Gate Commutated Thyristors)

IGCT is a new type of device developed by combining IGBT and GTO technologies on the basis of SCR technology, which is suitable for high-voltage and large-capacity inverter systems, and is a new type of power semiconductor device used in giant power electronics packages.

IGCT is a GTO chip integrated with anti-parallel diode and gate driver circuit, and then connected with its gate driver in a low inductance way at the periphery, combining the advantages of stable turn-off capability of transistor and low pass-state loss of SCR. The SCR's performance is utilized in the on-state phase and the transistor's characteristics are presented in the off-state phase.

3.IEGT (Injection Enhanced Gate Transistor)

IEGT is an IGBT series power electronic device with withstand voltage of 4kV or more, which has made a leap forward in the development of large-capacity power electronic devices by adopting the structure of enhanced injection to achieve low pass-state voltage. It has the characteristics of low loss, high speed operation, high voltage withstand, active gate drive intelligence, etc., as well as the use of trench structure and multi-chip parallel connection and self-equalizing current characteristics, so it has the potential to further expand the current capacity. In addition, many derivatives are available in modular packages, which are expected in large and medium capacity converter applications.

4.IPEM (Integrated Power Elactronics Modules)

IPEM is a module that integrates many devices of power electronics devices together. It starts with the semiconductor devices MOSFET, IGBT or MCT and diode chips packaged together to form a building block unit, and then these building block units are iterated onto an open-hole, high conductivity insulating ceramic substrate, under which are copper substrates, beryllium oxide ceramic and heat sinks in turn. IPEM realizes the intelligence and modularity of power electronics technology, greatly reduces circuit wiring inductance, system noise and parasitic oscillation, and improves system efficiency and reliability.

5.PEBB (Power Electric Building Block)

A typical PEBB (Power Electric Building Block) is an integrated device or module that can handle electrical energy developed on the basis of IPEM, which is not a specific semiconductor device, but an integration of different devices and technologies designed according to the optimal circuit structure and system structure.

A typical PEBB is shown in the figure above. Although it looks like a power semiconductor module, a PEBB includes not only power semiconductor devices, but also gate drive circuits, level translation, sensors, protection circuits, power supplies and passive devices. Through these two interfaces, several PEBBs can form power electronic systems. These systems can be as simple as a small DC-DC converter or as complex as a large distributed power system. The number of PEBBs in a system can range from one to any number. Multiple PEBB modules working together can perform system-level functions such as voltage conversion, energy storage and conversion, and cathodic resistance matching, etc. The most important feature of PEBB is its versatility.

6. Super Power SCR

Since the introduction of SCR, its power capacity has increased by nearly 3000 times. Now many countries have been able to produce 8kV/4kA SCRs stably. 8kV/4kA and 6kV/6kA light-triggered SCRs (LTT) are now in production in Japan. The United States and Europe mainly produce electrically triggered SCR. recent decade, due to the rapid development of self-closing devices, SCR applications have shrunk, but, due to its high voltage, high current characteristics, it still occupies a very important position in HVDC, static reactive power compensation (SVC), high-power DC power supply and ultra-high-power and high-voltage variable frequency speed control applications. It is expected that in the next few years, SCR will continue to develop in high-voltage, high-current applications.

7. Pulse power closure switch SCR

This device is particularly suitable for the transmission of very strong peak power (several MW), very short duration (several ns) discharge closure switch applications, such as: lasers, high-intensity lighting, discharge ignition, electromagnetic transmitters and radar modulators. The device can be opened quickly at a high voltage of several kV, does not require discharge electrodes, has a long service life, small size, relatively low price, and is expected to replace the current application of high-voltage ion gate, ignition tube, spark gap switch or vacuum switch.

8. New GTO devices - integrated gate commutation SCR

Currently there are two conventional GTO alternatives: high-power IGBT modules, new GTO-derived devices - integrated gate commutation IGCTSCR. IGCTSCR is a new high-power devices, compared with conventional GTOSCR, it has many excellent characteristics, such as, without buffer circuit to achieve reliable shutdown, short storage time, high turn-on capability, turn-off gate charge and The application system (including all devices and peripheral components such as anode reactors and buffer capacitors, etc.) has low total power loss, etc.

9. IGBT (Trench IGBT) modules

The IGBT cells in today's high-power IGBT modules usually use trench gate structure IGBTs, which are usually processed with 1μm accuracy compared to flat gate structure, thus greatly improving cell density. The presence of gate trench eliminates the junction-type field effect transistor effect between adjacent cells in planar gate devices, and introduces a certain electron injection effect, which makes the on-state resistance decrease. The conditions are created for increasing the thickness of the long base region and improving the device withstand voltage. Therefore, the high-voltage and high-current IGBT devices that have emerged in recent years all adopt this structure.

10.IEGT (Injection Enhanced Gate Trangistor)

In recent years, Toshiba of Japan has developed IEGT, which, like IGBT, is also divided into two structures: planar gate and trench gate, with the former product coming out soon and the latter still under development. 2 orders of magnitude lower) and higher operating frequency. In addition, the device adopts a flat crimped electrode lead structure, which can be expected to have high reliability.

11.MOS Gated SCR

MOS gate-controlled SCR makes full use of the good pass-state characteristics of SCR, excellent turn-on and turn-off characteristics, and is expected to have excellent self-shutdown dynamic characteristics, very low pass-state voltage drop and high voltage resistance, becoming a promising high-voltage high power device for future development in power devices and power systems. There are three main MOS gated SCR structures: MCT, BRT, and EST, of which EST is probably the most promising structure in MOS. However, it will take quite a long time for this device to really become a commercial and practical device and reach the level of replacing GTO.

12.GaAs diode

With the increasing frequency of converter switching, the requirements for fast recovery diodes have also increased. It is known to have superior high-frequency switching characteristics than silicon diodes, but due to process technology and other reasons, GaAs diodes have a lower withstand voltage, the practical application is limited. To meet the needs of high-voltage, high-speed, high-efficiency and low-EMI applications, high-voltage GaAs high-frequency rectifier diodes have been successfully developed at Motorola. Compared with silicon fast recovery diodes, the significant features of this new diode are: small reverse leakage current change with temperature, low switching losses, and good reverse recovery characteristics.

13.SiC power devices

In the power devices made of new semiconductor materials, the most promising is the SiC power devices. Its performance index is an order of magnitude higher than GaAs devices. Compared with other semiconductor materials, SiC has the following excellent physical characteristics: high band width, high saturation electron drift rate, high breakdown strength, low dielectric constant and high thermal conductivity. These excellent physical properties make SiC an ideal semiconductor material for high temperature, high frequency, and high power applications. Under the same withstand voltage and current conditions, the drift region resistance of SiC devices is 200 times lower than that of silicon, and even the on-state voltage drop of high withstand voltage SiC field-effect tubes is much lower than that of unipolar and bipolar silicon devices. Moreover, the switching time of SiC devices can reach the order of 10nS and has a very superior FBSOA.

Prepare your supply chain

Our supplier network has been reviewed and improved for more than ten years.

Our strategic location around the world enables us to access and review the company's headquarters before making a purchase decision.

E-energy Holding Limited cooperates with a well -represented testing agency to conduct in -depth inspections and tests before delivering parts to our customers.

Our procurement is concentrated in franchise and manufacturer direct sales.

Add E-energy Holding Limited to the list of suppliers approved by you, and let our team help you make strategic and wise procurement decisions.

#E-energy #power semiconductor devices

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