#Low Capacitance ESD Protection

[ddivd2tez]

https://www.futureelectronics.com/p/electromechanical--circuit-protection--esd-protection/nup2105lt1g-onsemi-7467806

Bus ESD Protection Diode, ESD protections circuit, Electrostatic discharge protection

NUP2105L Series 350 W Dual Line CAN Bus Protector ESD Protection Diode - SOT-23

[jams2nold]

https://www.futureelectronics.com/p/electromechanical--circuit-protection--tvs-diodes/sm6t36cay-stmicroelectronics-8034866

Diode arrays, ESD protection array, Bi Directional Transient Voltage Suppressor

SM6T Series 600 W 36 V Bi Directional Transient Voltage Suppressor - DO-214AA

[electronalytics]

Low Capacitance Diodes for ESD Protection Market Outlook & Forecast till 2033

The competitive analysis of the Low Capacitance Diodes for ESD Protection Market include a comprehensive analysis of market trends, competitor landscape, consumer behavior, and potential opportunities. It should cover key demographics, market size, growth projections, and risk factors. The report should also highlight the methodology used for data collection and analysis, presenting findings with visual aids such as charts and graphs. Additionally, recommendations and strategic insights for stakeholders to make informed decisions are crucial. The report should be concise, well-organized, and provide actionable information for businesses aiming to navigate the market effectively.

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A  Low Capacitance Diodes for ESD Protection market research report serves to assess market dynamics, identify opportunities, and mitigate risks for businesses. It analyzes consumer preferences, competitor strategies, and economic trends. The report facilitates informed decision-making by presenting data on market size, growth potential, and emerging patterns. It aids in product development, pricing strategies, and market positioning. Additionally, market research reports help businesses understand their target audience, enhance marketing efforts, and optimize resource allocation. By offering actionable insights, these reports empower organizations to stay competitive, adapt to changing market conditions, and foster sustainable growth in a dynamic business environment.

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Market Segmentations:

Global Low Capacitance Diodes for ESD Protection Market: By Company • Infineon Technologies AG • Littelfuse • Onsemi • STMicroelectronics • Toshiba Electronic Devices & Storage Corporation • Nexperia • Good-Ark Semiconductor • Texas Instruments • Vishay Intertechnology, Inc • Guangdong Shikues Micro Industrial Co., Ltd Global Low Capacitance Diodes for ESD Protection Market: By Type • 2-Channel Type • 3-Channel Type • 4-Channel Type • 6-Channel Type Global Low Capacitance Diodes for ESD Protection Market: By Application • RF Switch • Antenna • Monitor • Speaker • Other

Regional Analysis of Global Low Capacitance Diodes for ESD Protection Market

All the regional segmentation has been studied based on recent and future trends, and the market is forecasted throughout the prediction period. The countries covered in the regional analysis of the Global Low Capacitance Diodes for ESD Protection market report are U.S., Canada, and Mexico in North America, Germany, France, U.K., Russia, Italy, Spain, Turkey, Netherlands, Switzerland, Belgium, and Rest of Europe in Europe, Singapore, Malaysia, Australia, Thailand, Indonesia, Philippines, China, Japan, India, South Korea, Rest of Asia-Pacific (APAC) in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA), and Argentina, Brazil, and Rest of South America as part of South America.

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[rber2eerk]

https://www.futureelectronics.com/p/electromechanical--circuit-protection--tvs-diodes/usblc6-2sc6y-stmicroelectronics-1103009

Bidirectional ESD Protection, diode circuit, Low Capacitance TVS Diode Array

USBLC6 Series 2 Line 6 V Uni / Bi Directional ESD Protection - SOT-23-6

[dena2crry]

Circuit Protection Devices, ESD protection circuit, ESD protection equipment

USBLC6 Series 4 Channel 5.25 V SMT Uni-Directional Auto ESD Protection - SOT-23-6

[jnic2nssn]

Diode arrays, ESD protection arrays, Diode circuit, Circuit Breakers

PGB1 Series 150 V 0.06 pF Bi-Directional 0402 SMT PulseGuard® ESD Suppressor

[vbsemi-mosfet]

MOSFET's pull-down resistor serves what function?

MOSFET's pull-down resistor serves what function? (youtube.com)

What is the function of the pull-down resistor on the of a MOSFET?

The pull-down resistor between the gate (G) and source (S) of a MOSFET serves several functions:

1.Preventing False Turn-On: The Miller capacitance, a parasitic capacitor between the gate (G) and drain (D), can cause the MOSFET’s drain-source voltage (Vds) to change from nearly 0 (saturation voltage drop) to the bus voltage when the MOSFET is turned off. This rate of voltage change is "dv/dt." Since a capacitor responds to voltage changes by generating a current, the voltage change across the capacitor generates a current "i."

The gate-source (G-S) junction has an insulating layer, usually silicon dioxide (SiO2), making G-S a high-impedance path (tens to hundreds of megaohms). If there is a driving abnormality, the current through the Miller capacitance can charge the G-S junction. A small current through a high impedance can correspond to a high voltage, potentially charging the gate voltage above the threshold voltage "Vgs(th)," causing the MOSFET to turn on again, which is a dangerous situation.

2.Providing a Discharge Path: In a flyback power supply topology, the Miller capacitance current is discharged through a low-resistance path inside the driver chip, preventing the gate from being charged high enough to cause a false turn-on.

Here, we understand that there is already a discharge pull-down resistor inside the driver chip. However, if the gate resistor (Rg) is open-circuited or not connected for any reason, the external pull-down resistor (R8) can provide a discharge path for the Miller capacitance, keeping the G-S junction of the MOSFET at low impedance for a stable and safe state. This is a critical function of the pull-down resistor.

3.Pre-Protection Resistor: Another function of the pull-down resistor is as a pre-protection resistor. The G-S junction of a MOSFET is high-impedance, which is why it is sensitive to ESD. High voltage applied to the gate is not easily discharged and, over time, can damage the silicon dioxide layer between the G-S junction, leading to device failure.

Therefore, the pull-down resistor balances power consumption and effective discharge. Typically, for low to medium power supplies (0-500W), a resistor value of around 10K-20K is chosen, while for high-power supplies, 4.7K-10K is selected.

That concludes this content! Thank you for your support!

[kvin2dson]

https://www.futureelectronics.com/p/electromechanical--circuit-protection--esd-protection/srda05-4-tbt-semtech-1727932

Electrostatic discharge protection, ESD protection diode, ESD protection circuit

SRDA Series 20 V 8 pF SMT RailClamp® Low Capacitance TVS Diode Array - SOIC-8

[lanshengic]

Diodes Incorporated Introduces Space-Saving TVS with Superior ESD and Surge Protection for High-Speed I/O

【Lansheng Technology Information】On April 6, 2023, Diodes announced the launch of a new bidirectional transient voltage suppressor diode (TVS) to meet the market's demand for robust protection of high-speed data ports. The D3V3Z1BD2CSP is designed to meet protection against electrostatic discharge (ESD) shock and surge events. Primary applications for this product are high-performance computing hardware, I/O ports for smartphones, laptops and tablets, monitors, and game consoles.

While many competing products have to make a design compromise between strong surge protection features or low input capacitance, the D3V3Z1BD2CSP can provide both. Its extremely low capacitance value (0.3pF typical) does not interfere or prevent high-speed data communications, thus ensuring that signal integrity is maintained. Its high peak pulse current (10.5A typical) and low clamping voltage (5.3V) protect I/O ports and their sensitive electronic components from transient voltages. The risk of electrical overload damage caused by activities such as frequent hot swapping is thus avoided. The D3V3Z1BD2CSP complies with the IEC61000-4-2 immunity standard and provides robust ESD protection against ±20kV air and contact discharge, thereby increasing system reliability.

The D3V3Z1BD2CSP can be used to protect I/O interfaces such as USB Type-C®, DisplayPort™, HDMI™, and SD cards, carrying high-speed data transfer rates up to 20Gbps. The -55°C to +150°C operating temperature range ensures continuous protection in challenging product application environments.

Diodes' D3V3Z1BD2CSP TVS is packaged in an extremely compact DSN0603 wafer-level chip size package measuring only 0.6mm x 0.3mm x 0.3mm.

Lansheng Technology Limited, which is a spot stock distributor of many well-known brands, we have price advantage of the first-hand spot channel, and have technical supports. 

Our main brands: STMicroelectronics, Toshiba, Microchip, Vishay, Marvell, ON Semiconductor, AOS, DIODES, Murata, Samsung, Hyundai/Hynix, Xilinx, Micron, Infinone, Texas Instruments, ADI, Maxim Integrated, NXP, etc

To learn more about our products, services, and capabilities, please visit our website at http://www.lanshengic.com

[alonzomay68]

Low Capacitance Diode Array

I work as a specialist in evaluating Circuit Protection Devices, TVS Diodes, USBLC6-4SC6, STMicroelectronics as well as ESD voltage, Low Capacitance Diode Array.

[mkie2naks]

SR Series 20 V 6 pF SMT RailClamp® Low Capacitance TVS Diode Array - SOT-143

[richw2len]

ESD5Z Series 6.2 V 80 pF 5 Vrwm TVS and ESD Protection Diodes - SOD-523

[srh22gilrr]

A complete selection of ESD protection diodes & TVS diode arrays from several diode array manufacturers are avelabul for an ESD protection circuit or electrostatic discharge protection products, devices & equipment.