#NAND Flash Memory Market news

[semiconductor-hub]

Next-Generation Memory: Shaping the Future of Data Storage

Next-generation memory technologies are transforming data storage by offering enhanced performance, capacity, and energy efficiency compared to traditional memory solutions. Innovations in this field include advancements in non-volatile memory (NVM) technologies such as 3D NAND flash, phase-change memory (PCM), and resistive random-access memory (ReRAM). These technologies address the growing demand for faster data access, increased storage density, and lower power consumption in a variety of applications, from consumer electronics to enterprise data centers. The development of next-generation memory is crucial for supporting emerging technologies like artificial intelligence (AI), big data analytics, and the Internet of Things (IoT).

The Next-Generation Memory Market, valued at USD 6.3 billion in 2022, is projected to reach USD 33.65 billion by 2030, with a CAGR of 23.3% from 2023 to 2030.

Future Scope:

The future of next-generation memory will be driven by ongoing research and development in memory technologies and their integration into new applications. Key areas of focus will include increasing memory density, improving read/write speeds, and enhancing energy efficiency. Innovations such as 3D memory stacking and hybrid memory architectures will enable the development of more powerful and compact memory solutions. The proliferation of AI, IoT, and 5G technologies will further accelerate the demand for advanced memory solutions capable of handling large volumes of data and delivering high-speed performance.

Key Points:

Next-generation memory technologies offer improvements in performance, capacity, and energy efficiency.

Innovations include 3D NAND flash, phase-change memory (PCM), and resistive random-access memory (ReRAM).

Future developments will focus on increasing memory density, speed, and efficiency.

Trends:

Key trends in the next-generation memory market include the increasing adoption of 3D NAND flash technology, which provides higher storage densities and improved performance compared to traditional 2D NAND. The rise of AI and big data applications is driving demand for faster and more efficient memory solutions, leading to the development of advanced NVM technologies. Hybrid memory systems, which combine different types of memory technologies, are gaining traction for their ability to optimize performance and cost. Additionally, research into new memory materials and architectures is advancing the capabilities of next-generation memory.

Application:

Next-generation memory technologies are used in a variety of applications, including consumer electronics (smartphones, tablets, and laptops), enterprise storage systems (data centers and cloud computing), and embedded systems (automotive and industrial applications). They play a crucial role in enhancing data access speeds, increasing storage capacities, and reducing power consumption. The technology is also vital for emerging applications such as AI, IoT, and advanced analytics, where high-performance memory is essential for processing large volumes of data.

Conclusion:

Next-generation memory technologies are pivotal in advancing data storage solutions by offering significant improvements in performance, capacity, and energy efficiency. As technology continues to evolve, innovations in memory materials, architectures, and integration will drive further advancements. The growing demands of AI, IoT, and big data will ensure that next-generation memory remains at the forefront of technological development, supporting the creation of faster, more efficient, and high-capacity data storage solutions.

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[themarketresearchreportnsight]

Next Generation Memory Technologies Market Unidentified Segments – The Biggest Opportunity Of 2024

Next-generation memory technologies are a type of semiconductor that is widely used for faster, efficient, and cost-effective memory solutions. In today’s time increasing use of digital devices and advanced technologies have increased demand for greater storage capacity solutions with better bandwidth for high data storage and rapid functioning. However, flash memory is widely used in consumer electronic products such as cell phones and music players and NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops and desktops.

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Latest released the research study on Global Next Generation Memory Technologies Market, offers a detailed overview of the factors influencing the global business scope. Next Generation Memory Technologies Market research report shows the latest market insights, current situation analysis with upcoming trends and breakdown of the products and services. The report provides key statistics on the market status, size, share, growth factors of the Next Generation Memory Technologies The study covers emerging player’s data, including: competitive landscape, sales, revenue and global market share of top manufacturers are Samsung Electronics (South Korea), Crossbar Inc. (United States), Fujitsu (Japan), Micron Technology (United States), SanDisk (United States), Toshiba (Japan), Panasonic (Japan), SK Hynix (South Korea), Future Electronics (Canada), Intel Corporation (United States),

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[electronalytics]

Memory Integrated Circuits Market Analysis 2023 Dynamics, Players, Type, Applications, Trends, Regional Segmented, Outlook & Forecast till 2033

The competitive analysis of the Memory Integrated Circuits Market offers a comprehensive examination of key market players. It encompasses detailed company profiles, insights into revenue distribution, innovations within their product portfolios, regional market presence, strategic development plans, pricing strategies, identified target markets, and immediate future initiatives of industry leaders. This section serves as a valuable resource for readers to understand the driving forces behind competition and what strategies can set them apart in capturing new target markets.

Market projections and forecasts are underpinned by extensive primary research, further validated through precise secondary research specific to the Memory Integrated Circuits Market. Our research analysts have dedicated substantial time and effort to curate essential industry insights from key industry participants, including Original Equipment Manufacturers (OEMs), top-tier suppliers, distributors, and relevant government entities.

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Market Segmentations:

Global Memory Integrated Circuits Market: By Company • Emcore • Intel • Aifotec • Agilent Technologies • Kotura • Onechip Photonics • Infinera • CyOptics • Finisar • Kaiam Global Memory Integrated Circuits Market: By Type • DRAM • NAND Flash Memory • Others Types Global Memory Integrated Circuits Market: By Application • Consumer Electronics • Automotive • IT & Telecommunication • Healthcare • Industrial • Others

Regional Analysis of Global Memory Integrated Circuits Market

All the regional segmentation has been studied based on recent and future trends, and the market is forecasted throughout the prediction period. The countries covered in the regional analysis of the Global Memory Integrated Circuits market report are U.S., Canada, and Mexico in North America, Germany, France, U.K., Russia, Italy, Spain, Turkey, Netherlands, Switzerland, Belgium, and Rest of Europe in Europe, Singapore, Malaysia, Australia, Thailand, Indonesia, Philippines, China, Japan, India, South Korea, Rest of Asia-Pacific (APAC) in the Asia-Pacific (APAC), Saudi Arabia, U.A.E, South Africa, Egypt, Israel, Rest of Middle East and Africa (MEA) as a part of Middle East and Africa (MEA), and Argentina, Brazil, and Rest of South America as part of South America.

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Key Report Highlights:

Key Market Participants: The report delves into the major stakeholders in the market, encompassing market players, suppliers of raw materials and equipment, end-users, traders, distributors, and more.

Comprehensive Company Profiles: Detailed company profiles are provided, offering insights into various aspects including production capacity, pricing, revenue, costs, gross margin, sales volume, sales revenue, consumption patterns, growth rates, import-export dynamics, supply chains, future strategic plans, and technological advancements. This comprehensive analysis draws from a dataset spanning 12 years and includes forecasts.

Market Growth Drivers: The report extensively examines the factors contributing to market growth, with a specific focus on elucidating the diverse categories of end-users within the market.

Data Segmentation: The data and information are presented in a structured manner, allowing for easy access by market player, geographical region, product type, application, and more. Furthermore, the report can be tailored to accommodate specific research requirements.

SWOT Analysis: A SWOT analysis of the market is included, offering an insightful evaluation of its Strengths, Weaknesses, Opportunities, and Threats.

Expert Insights: Concluding the report, it features insights and opinions from industry experts, providing valuable perspectives on the market landscape.

Report includes Competitor's Landscape:

➊ Major trends and growth projections by region and country ➋ Key winning strategies followed by the competitors ➌ Who are the key competitors in this industry? ➍ What shall be the potential of this industry over the forecast tenure? ➎ What are the factors propelling the demand for the Memory Integrated Circuits? ➏ What are the opportunities that shall aid in significant proliferation of the market growth? ➐ What are the regional and country wise regulations that shall either hamper or boost the demand for Memory Integrated Circuits? ➑ How has the covid-19 impacted the growth of the market? ➒ Has the supply chain disruption caused changes in the entire value chain? Customization of the Report:

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[fairfield-research]

Non-volatile Memory Market Size, Status, Top Emerging Trends, Growth and Business Opportunities 2031

The global non-volatile memory (NVM) market is poised for unprecedented growth, with projections indicating a substantial surge from US$79 billion in 2024 to a staggering US$151 billion by 2031. This remarkable expansion is forecasted to be driven by a myriad of factors, including technological advancements, rising demand for data storage solutions, and a shifting landscape towards solid-state drives (SSDs).

For more information: https://www.fairfieldmarketresearch.com/report/non-volatile-memory-market

Unprecedented Growth Trajectory

Between 2019 and 2023, the non-volatile memory market experienced a significant growth spurt, attributed to escalating demands across key sectors such as electronics, automotive, and telecommunications. Building upon this momentum, the market is primed for sustained expansion from 2024 to 2031, fueled by the proliferation of data-driven technologies like Artificial Intelligence (AI) and the Internet of Things (IoT). Notably, the advent of next-generation NVM technologies such as Ferroelectric RAM (FeRAM) and Magnetoresistive RAM (MRAM) promises enhanced efficiency and performance, further bolstering market growth.

Key Drivers of Growth

The surge in non-volatile memory market is underpinned by several key determinants:

Technological Advancements: Continuous innovations in NVM technologies, including NAND flash and emerging solutions like 3D XPoint and MRAM, are driving market growth. These advancements result in increased storage capacities, faster data access speeds, and enhanced reliability, catering to the escalating demands across various applications.

Rising Demand for Data Storage: With the exponential growth of big data, IoT devices, and cloud computing services, there is an ever-growing need for high-performance, cost-effective, and energy-efficient storage solutions. NVM technologies fulfill this demand across diverse sectors, including IT, telecommunications, healthcare, and automotive.

Shift Towards Solid-State Drives (SSDs): The adoption of SSDs in consumer and enterprise markets is a significant growth driver for the NVM market. SSDs offer advantages such as faster read/write speeds, lower power consumption, and greater durability compared to traditional hard disk drives (HDDs), prompting more users to transition towards SSDs and thereby propelling the demand for NVM components.

Addressing Market Challenges

While the outlook for the non-volatile memory market is overwhelmingly positive, it is not without its challenges:

Cost Constraints: NVM technologies often incur high production costs due to intricate fabrication processes and materials involved, posing a barrier to market accessibility for smaller companies and startups.

Technological Complexity: Advancing NVM technologies face challenges related to miniaturization, scalability, and performance optimization, necessitating extensive research and development efforts.

Market Competition: The NVM market is fiercely competitive, with established players continually innovating and introducing new products. Competition can intensify price pressures and inhibit the market entry of emerging technologies or smaller companies.

Seizing Opportunities

Despite these challenges, several opportunities abound for market players:

Edge Computing Integration: The rising demand for edge computing presents a substantial opportunity for NVM market players. Edge devices require reliable storage solutions capable of handling data processing tasks efficiently in decentralized environments, thus creating a niche for NVM technologies.

Sustainable Storage Solutions: With sustainability becoming a key focus for businesses and consumers, there is a growing demand for eco-friendly storage solutions. NVM market players can capitalize on this trend by developing environmentally sustainable alternatives to traditional memory technologies.

Regulatory Influence

The regulatory landscape significantly shapes the NVM market, influencing aspects such as data security, environmental responsibility, innovation, and market stability. Strong intellectual property laws incentivize research in novel NVM technologies, while data privacy regulations drive innovation in encryption technologies.

[govindhtech]

Samsung 9th generation V-NAND SSD: Future of Storage

Samsung 9th generation V-NAND

In order to maintain its dominant position in the NAND flash market, Samsung Electronics, the global leader in advanced memory technology, today announced that mass production of its one-terabit (Tb) triple-level cell (TLC) The First 9th-Gen V-NAND (vertical NAND) has started.

Creating the First 3-D Vertical Structure Era

The duration of the human species is remarkably less than 14 seconds, if the history of the universe is considered a single year. The Sun and Earth are by no means at the centre of the universe’s development, as there are more than 170 billion known galaxies that are continuously expanding. Semiconductors can be compared in this same way.

A miniature universe can be observed by using an electron microscope to examine a semiconductor chip that is smaller than the size of a fingernail. In order to store enormous amounts of data, a chip with a thickness of only 1mm has millions of precisely designed spaces inside of it.

For many years, data-storing NAND flash memory solutions had a two-dimensional (2D) architecture in which chips were stacked and placed on flat surfaces. However, the amount of data that could be stored in these 2D structures was severely constrained.

Following a great deal of research to address this problem, Samsung invented V-NAND (vertical memory, where the “V” stands for vertical) flash memory, a technology that joins its cell layers via perforations in 3D space that is stacked vertically. The world’s first company to design and market a memory solution of this kind is Samsung.

This 3D V-NAND entered the market , revolutionising memory semiconductors from the 2D structure that had dominated electronic storage for decades. It permitted technical transition similar to people moving from 1- or 2-story residences to high-rise flats for the first time.

Samsung’s Semiconductor Solution Victory: V-NAND

Since its groundbreaking introduction, the V-NAND solution which features a revolutionary vertical 3D structure has become the industry standard.

When Samsung first developed a V-NAND solution in 2013, it had 24 layers; that number has grown to nearly 200. But just piling more layers on top of one another isn’t enough, much like in high-rise apartments.

As a building’s height increases, an apartment should be both tall and sturdy, with easy access via a reliable lift. Furthermore, a building’s height is limited by altitude constraints, and noise levels between floors need to be taken into account.

Regarding the V-NAND solution, the same holds true. Small variations in functionality and structure can be seen even in cases where the number of layers is comparable. This can be crucial in the semiconductor industry because even the smallest variation can have a profoundly different effect.

9th-Gen V-NAND

Bit density that leads the industry, up roughly 50% from the previous generation. The revolutionary double-stack structure of the V-NAND enhances productivity with cutting-edge “channel hole etching” technology.

“Samsung is thrilled to offer the first 9th-gen V-NAND to the industry, which will significantly advance future applications. Samsung has pushed the envelope in cell architecture and operational scheme for their next-generation product to meet the changing needs for NAND flash solutions, according to SungHoi Hur, Head of Flash Product & Technology of Samsung Electronics’ Memory Business. “Samsung will continue to set the trend for the high-performance, high-density solid-state drive (SSD) market that meets the needs for the coming AI generation with their latest V-NAND.”

Samsung increased the bit density of the Samsung 9th generation V-NAND by roughly 50% over the 8th-generation V-NAND, using the thinnest mould and the smallest cell size in the industry. The quality and dependability of the product have been improved by the application of new technologies such cell interference avoidance and cell life extension, while the planar area of the memory cells has been greatly decreased by the removal of dummy channel holes.

Furthermore, Samsung demonstrates its leadership in process capabilities with its cutting-edge “channel hole etching” technology. By stacking mould layers, this technique generates electron pathways and increases fabrication productivity by allowing the industry’s highest cell layer count to be simultaneously drilled in a double-stack structure. More complex etching techniques are needed to penetrate through higher cell numbers as the number of cell layers rises.

With “Toggle 5.1,” the next-generation NAND flash interface, the 9th-gen V-NAND can handle data input/output speeds up to 3.2 gigabits per second (Gbps), a 33% increase over its previous generation. By adding more PCIe 5.0 support along with this new interface, Samsung hopes to bolster its position in the high-performance SSD market.

Thanks to developments in low-power design, power consumption has also improved by 10% over the previous generation. Samsung 9th generation V-NAND is anticipated to be the best option for upcoming applications as consumers’ need to reduce energy use and carbon emissions grows.

Samsung began mass producing the 1Tb TLC Samsung 9th generation V-NAND this month, and in the second half of this year, it will launch the quad-level cell (QLC) model.

Read more on govindhtech.com

[dnnikhil]

Solid state drive (SSD) is defined as the storage device which consists of non-volatile methods of storing media and information with the help of circuit assemblies integrated in the device infrastructure itself. These devices consist of two major components for its functioning, namely flash controller as well as NAND flash memory chips which are optimized and integrated to provide high levels of functionality in performance. The device infrastructure is defined as fixed components that unlike HDD do not require any consistent movements to ensure that the information is being written on or stored on the storage device.

Rapid increase in the demand for SSD from data centers is a crucial factor accelerating the market growth, also rising various benefits and performing advantages, rising continuous advancements in SSD technologies to enhance performance and capabilities, rising demand for data centers which can store large amounts of data and require highly data-intensive operations, which in turn increases the demand for the product, rising growth in 3D NAND technology and its low power consumption qualities and rising diffusion of high end cloud computing, advantages of SSDs above HDDs, and increasing acceptance of SSDs in data centers are the major factors among others boosting the solid state drive (SSD) controller market. Moreover, increasing modernization and technological advancements in the devices, rising research and development activities in the market and rising emerging markets will further create new opportunities for solid state drive (SSD) controller market in the forecast period mentioned above.

[lanshengic]

Product introduction roadmap and agent information of the world's top five storage vendors

Followings are some datas collected from Lansheng Technology.

1. Samsung

As the world's leading electronics company, Samsung Electronics' business covers consumer electronics, IT and mobile communications, equipment solutions, etc., especially in the field of DRAM and NAND Flash semiconductor storage, Samsung Electronics has long ranked first in the world.

According to TrendForce data, Samsung's global market share in the DRAM and NAND markets will reach 43% and 33% respectively in 2022, making it the core supplier of the global memory chip industry.

Samsung Electronics was founded in 1969. It developed 256Kb DRAM in 1984, successfully developed the world's first 64Mb DRAM in 1992, developed the first 1Gb NAND flash memory in 1999, successfully developed 3D V-NAND technology in 2013, and mass-produced it in 2018. LPDDR5 DRAM, currently Samsung’s 10nm process and extreme ultraviolet lithography (EUV) technology has developed a large-capacity 512GB DDR5 memory module. At the same time, its 8th generation V-NAND memory layer number has reached 236. The company’s storage technology is at Global leading position.

2. Micron Technology

Micron Technology was founded in the United States in 1978. As one of the world's largest manufacturers of semiconductor storage and imaging products, its main businesses include DRAM, NAND flash memory, NOR flash memory, CMOS image sensors, etc.

In 2022, Micron Technology ranked third in the global DRAM market with a market share of 25%, and ranked fifth in the global NAND market with a market share of 12%.

Micron completed the design of 64K DRAM in 1979 and launched the first 64K DRAM product in 1981. In 1984, it launched the world's smallest 256K DRAM. In 2021, Micron launched the industry's first 1α node DRAM. In 2022, the company began to Customers are shipping samples of their 1β node DRAM products, taking the lead in entering the 1β stage, with EUV technology expected to be available in 2024. In terms of NAND, the company achieved mass production of the world's first 176-layer 3D NAND in November 2020, and will achieve shipment of 232-layer NAND products in 2022.

3. SK Hynix

SK Hynix is the world's leading storage company. The company is committed to producing DRAM, NAND Flash and CIS non-memory semiconductor products. It has four production bases in South Korea, Wuxi and Chongqing in China.

SK Hynix's predecessor was Hyundai Electronics; after the merger of Hyundai Electronics and LG Semiconductor, it was independently renamed Hynix in 2001; in 2012, SK Group acquired Hynix, and it became SK Hynix as it is known today.

On October 20, 2020, SK Hynix and Intel jointly announced the signing of an acquisition agreement in South Korea. According to the agreement, SK Hynix will acquire Intel's NAND flash memory and storage business for US$9 billion. The acquisition includes Intel's NAND SSD business, NAND components and wafer business, and its NAND flash memory manufacturing plant in Dalian, China. Intel will retain its unique Intel OptaneTM business.

On December 29, 2021, Solidigm announced its official establishment and became an independent subsidiary of SK Hynix in the United States.

In 2022, SK Hynix ranked second in the global DRAM market with a market share of 28%, and ranked fourth in the global NAND Flash market with a market share of 13%.

In 1984, SK Hynix successfully trial-produced 16Kb SRAM for the first time, acquired LG Semiconductor in 1999, successfully developed NAND Flash products in 2004, and developed the world's first TSV technology HBM in 2013. In 2019, it became the first time in the industry to successfully develop 128-layer 4D NAND. Enterprise, at this stage, SK Hynix has successfully developed the world's first 12-layer stacked HBM3 DRAM new product. Its DDR5 uses EUV lithography's 1αnm technology. In terms of NAND, in 2022, the company successfully developed 238-layer 4D NAND flash memory in 2023. It demonstrated its latest 300-layer 3D NAND product prototype, which is expected to be available in the 2024-2025 period.

4. Kioxia

Toshiba Memory officially changed its name to "Kioxia" on October 1, 2019, and its Chinese name is "Kioxia".

In 2007, as 2D NAND reached its scale limit, Toshiba took the lead in proposing the concept of 3D NAND structure. However, due to Toshiba's financial difficulties, this part of its core business had to be sold to a consortium led by Bain Capital, an American private equity investment company, in 2018. Toshiba only held about 40.6% of Kioxia's shares. In October 2019, the new company started afresh as Kioxia Holdings Co., Ltd.

Toshiba invented NAND flash memory in 1987. In April 2017, Kioxia's predecessor, Toshiba Memory Group, was spun off from Toshiba, creating advanced storage solutions and services that enrich people's lives and expand society's horizons. Kioxia's innovative 3D flash memory technology, BiCS FLASH™, is shaping the future storage methods for many high-density applications, including advanced smartphones, PCs, SSDs, automobiles, and data centers.

5. Western Digital Western Digital

Western Digital is a world-renowned storage manufacturer. It was founded in 1970 and is headquartered in California, USA. It has branches around the world and provides storage products to users around the world.

In 2011, Western Digital acquired Hitachi Global Storage Technologies (HGST) for US$4.3 billion, which acquired IBM's hard drive division for US$2 billion in 2002.

On October 22, 2015, Western Digital announced that it would acquire flash memory manufacturer SanDisk for US$19 billion in cash and stock. In May 2016, Western Digital completed its acquisition of Sandisk for US$16 billion. In December 2018, Western Digital officially announced that it would conduct a round of integration of its storage sub-brands. Enterprise and business-class storage product brands will abandon the HGST, SanDisk, tegile and WD brands and use the Western Digital unified brand. Including brands, the brand of consumer terminals will not change. Then Western Digital and SanDisk jointly announced that starting from January 1, 2021, the SanDisk brand will be renamed Western Digital, and the company's operating entity and brand name will be changed to "Western Digital GK" and "Western Digital Co., Ltd." On April 18, 2022, Western Digital officially released a new brand logo.

In November 2016, Western Digital and Tsinghua Unigroup established Ziguang Western Digital Company in Nanjing with a registered capital of US$158 million, of which Western Digital and Tsinghua Unigroup each hold 49% and 51% of the shares. In September 2017, Western Digital acquired Toshiba's semiconductor business for US$18.3 billion.

Now, Western Digital is preparing a new transformation plan and plans to sell its storage business to Kioxia Holdings.

According to reports, the two parties have held in-depth negotiations and plan to establish a new holding company after the merger. Western Digital will retain 50.1% of the assets, and the remaining 49.9% will be owned by Kioxia. The president of Kioxia will manage the new company's business, while the Japanese representative company will occupy the majority of the board of directors. The new company will be registered in the United States but will be headquartered in Japan and its shares will be listed on the U.S. and Tokyo stock exchanges.

If the merger is successful, the two parties will surpass South Korea's Samsung Electronics in global market share in the NAND field and amount, ranking first in the global memory market sales.

Lansheng Technology Limited, which is a spot stock distributor of many well-known brands, we have price advantage of the first-hand spot channel, and have technical supports. 

Our main brands: STMicroelectronics, Toshiba, Microchip, Vishay, Marvell, ON Semiconductor, AOS, DIODES, Murata, Samsung, Hyundai/Hynix, Xilinx, Micron, Infinone, Texas Instruments, ADI, Maxim Integrated, NXP, etc

To learn more about our products, services, and capabilities, please visit our website at http://www.lanshengic.com

[writerblogs]

Global NAND Flash Memory Market Is Estimated To Witness High Growth Owing To Increasing Demand for High-speed Storage Solutions

The global NAND Flash Memory Market is estimated to be valued at US$ 66.52 Bn in 2021 and is expected to exhibit a CAGR of 5.6% over the forecast period (2022-2030), as highlighted in a new report published by Coherent Market Insights. A) Market Overview: NAND flash memory is a type of non-volatile storage technology that retains data even when the power is turned off. It is widely used in various electronic devices such as smartphones, laptops, tablets, digital cameras, and USB flash drives. The advantages of NAND flash memory include high storage capacity, fast read and write speeds, low power consumption, and durability. With the increasing demand for high-speed storage solutions in the consumer electronics and automotive sectors, the market for NAND flash memory is expected to grow significantly. B) Market key trends: One key trend in the NAND flash memory market is the increasing adoption of solid-state drives (SSDs) in data centers. SSDs offer faster data access and improved reliability compared to traditional hard disk drives (HDDs). As data centers require high-performance storage solutions to handle large amounts of data, the demand for NAND flash memory-based SSDs is expected to grow. For example, according to Dell'Oro Group, the worldwide enterprise SSD market is projected to increase at a CAGR of 11% from 2020 to 2025. C) PEST Analysis: - Political: Stable political environment ensures smooth operations for NAND flash memory manufacturers. - Economic: Increasing disposable income and growing consumer electronics market drive the demand for NAND flash memory. - Social: Rising adoption of smartphones, laptops, and other electronic devices fuels the need for high-speed storage solutions. - Technological: Advancements in NAND flash memory technology such as 3D NAND and QLC NAND provide higher storage capacity and improved performance. D) Key Takeaways: - The global NAND Flash Memory Market is expected to witness high growth, exhibiting a CAGR of 5.6% over the forecast period, due to increasing demand for high-speed storage solutions. - Asia Pacific is the fastest-growing and dominating region in the NAND flash memory market, driven by the presence of major consumer electronics manufacturers and the growing data center industry. - Key players operating in the global NAND flash memory market include KIOXIA Corporation, Cypress Semiconductor Corporation (Infineon Technologies), SK Hynix Inc., SanDisk Corp. (Western Digital Technologies Inc.), Powerchip Technology Corporation, Samsung Electronics Co. Ltd., Intel Corporation, Yangtze Memory Technologies, and Micron Technology Inc. In conclusion, the global NAND flash memory market is poised for significant growth due to the increasing demand for high-speed storage solutions in consumer electronics and data centers. The adoption of SSDs in data centers and technological advancements in NAND flash memory technology are key trends driving the market's growth. With Asia Pacific emerging as the fastest-growing region and major players like KIOXIA, SK Hynix, and Samsung Electronics leading the market, the future looks promising for the NAND flash memory industry.

[semiconductor-hub]

NAND Flash Memory: High-Density Storage for Modern Devices

NAND flash memory is a type of non-volatile storage technology that provides high-density storage solutions for a wide range of electronic devices. Unlike traditional hard drives, NAND flash memory is faster, more durable, and more compact, making it ideal for use in smartphones, tablets, SSDs, and memory cards. NAND flash memory operates by storing data in memory cells that are organized in a grid-like structure, enabling high-capacity storage in a small form factor. Its speed and reliability have made it the preferred choice for modern storage applications.

The NAND Flash Memory Market, valued at USD 78.84 billion in 2022, is projected to reach USD 109.56 billion by 2030, expanding at a CAGR of 4.2% from 2023 to 2030.

Future Scope:

The future of NAND flash memory will be shaped by advancements in storage density, performance, and manufacturing technology. Innovations in 3D NAND technology, which stacks memory cells vertically to increase density, will continue to drive improvements in storage capacity and performance. The development of new NAND architectures and materials will further enhance speed and endurance. Additionally, the integration of NAND flash memory with emerging technologies, such as AI and IoT, will expand its applications and capabilities, supporting the growing demands for high-speed and high-capacity storage.

Key Points:

NAND flash memory provides high-density, non-volatile storage.

Used in smartphones, tablets, SSDs, and memory cards.

Future developments will focus on 3D NAND technology, new architectures, and integration with emerging technologies.

Trends:

Key trends in the NAND flash memory market include the growing adoption of 3D NAND technology to increase storage density and performance. The demand for high-capacity and high-speed storage solutions is driving advancements in NAND flash technology, with applications in consumer electronics, data centers, and cloud computing. The integration of NAND flash memory with AI and machine learning is enabling more advanced data processing and storage solutions. Additionally, the shift towards SSDs and other high-performance storage solutions is driving the need for more reliable and efficient NAND flash memory.

Application:

NAND flash memory is used in various applications, including consumer electronics, enterprise storage, and portable devices. In smartphones and tablets, NAND flash provides fast and reliable storage for apps, media, and files. In SSDs, NAND flash delivers high-speed data access and improved performance compared to traditional hard drives. Memory cards and USB drives use NAND flash for portable and expandable storage. NAND flash is also increasingly used in data centers and cloud computing for high-capacity and high-performance storage solutions.

Conclusion:

NAND flash memory plays a crucial role in modern storage technology, offering high-density, fast, and reliable storage solutions. As advancements continue in 3D NAND technology and new materials, NAND flash will drive improvements in storage capacity and performance. Its versatility and high performance make it an essential technology for a wide range of applications, supporting the needs of both consumer and enterprise environments.

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[severepeanutperfection]

Non-volatile Memory Market Latest Advancements and Business Opportunities 2032

In the ever-expanding universe of digital data, the Non-volatile Memory market emerges as a transformative force, reshaping the landscape of storage technology and propelling us into a future of unbounded possibilities. Non-volatile memory, or NVM, has revolutionized data storage by offering a unique blend of high-speed access, persistent storage, and power efficiency. As the demand for faster, more reliable, and energy-efficient data storage solutions intensifies, this market stands at the forefront of innovation, rewriting the rules of digital memory.

The Non-volatile Memory market's hallmark lies in its ability to retain data even when power is disconnected, providing a vital bridge between volatile RAM and traditional disk-based storage. With technologies like NAND Flash, NOR Flash, and emerging contenders such as 3D XPoint, NVM solutions have shattered performance barriers, enabling lightning-fast read and write speeds that redefine data access. Whether it's in consumer electronics, enterprise data centers, or industrial applications, NVM's ability to combine speed and durability has made it a cornerstone of modern computing architecture.

As the digital world continues to amass data at an unprecedented rate, the Non-volatile Memory market has responded with innovations that cater to a spectrum of needs. From high-capacity solid-state drives (SSDs) that accelerate data-intensive tasks to embedded memory solutions that power IoT devices, NVM's versatility is reshaping industries and enabling new paradigms of computing. This adaptability, coupled with the market's commitment to driving down costs and increasing storage densities, positions NVM as a driving force in shaping the next era of digital transformation.

For More Info@ https://www.globenewswire.com/en/news-release/2023/02/15/2608692/0/en/With-15-8-CAGR-The-Non-volatile-Memory-Market-worth-US-152-0-billion-by-2033-Globally-Report-by-Persistence-Market-Research.html

Collaboration between semiconductor manufacturers, storage experts, and software developers has been instrumental in propelling the Non-volatile Memory market forward. This synergy has led to advancements in error correction, wear leveling, and data management algorithms, ensuring the longevity and reliability of NVM solutions. As the market evolves, the trajectory points toward even more breakthroughs, with the potential to usher in a new era of ultra-fast, highly resilient, and environmentally conscious data storage, solidifying NVM's role as an indispensable cornerstone of our digital age.

[athomewiththecicadas]

Small ICBM shows real promise.

Now, when considering the latest developments in mobile technology, reconsidering satelitte infrastructure shows new light in existing and dated launch technologies.

https://www.bestbuy.com/site/dell-inspiron-3420-14-touch-laptop-snapdragon-8cx-gen-2-8gb-memory-256gb-solid-state-drive-platinum-silver/6525656.p?skuId=6525656

Reasonably speaking, you're talking amd ryzen3/Intel core i3 comparable, at a higher price, that requires: "an application processor based, proprietary Operating System." 3g/4g LTE Sat where it's the receiver chip, which is all about corporate law. And you won't have the support like cell providers.

If that's what you were trying to do, you're gonna fight for it because support means everything but tech business. I offered a second investment package, supported by our Joint Militia Detachment, full of taxable style local economy structural businesses, and you know how that is, everything but exactly what you were talking about, which is exactly what you were talking about.

But the proprietary Operating System is rude. And if you think you are going to help, and try to mass produce our problems away, it's more like it would mass produce "you" away. There's talk of it being capable of tasking independent processors to process kernel separately, maybe comparable to AMD Ryzen 5/Intel core i5, but it's application based, cutting off your standard processors without memory management. And that is not reasonably priced. If I hear one more word about expanding intellectual properties. It's completely different then the China/Japan references. The word "institutional" already cuts out "tech development." And that's hurt in a whole lot of places close to home.

So, it's a cut in high tech, but it's another market to consider. And if you liked the idea of 3d nand flash, the institution wasn't done cutting out the fluff, that was making our interests in consumer technologies obsolete.

[rubydobson12]

The global flash-based array market is expected to register a CAGR of 18% through 2032.

A flash-based array is a storage system that uses flash memory instead of traditional spinning disks. These arrays provide faster access to data, higher performance, and lower power consumption. The flash-based array market is growing rapidly in recent years due to the increasing demand for faster data processing and storage in data-intensive applications such as big data analytics, artificial intelligence, and cloud computing.

The flash-based array market was estimated to be worth nearly $15 billion in 2015 and is projected to grow to nearly $63 billion by the end of 2024. Over the forecast period, the global flash-based array market will grow at a CAGR of 18% in terms of value.

Recent developments in the flash-based array market

The flash-based array market has developed significantly in recent years due to the growing demand for high-performance storage solutions in data centers and cloud computing environments. Below are some of the recent developments in the flash-based array market.

Emergence of NVMe technology: Non-Volatile Memory Express (NVMe) is a protocol designed specifically for flash-based storage systems, providing faster data access than existing storage protocols. Many vendors have introduced NVMe-based flash arrays that offer higher performance and lower latency than their predecessors.

Adopt QLC NAND Flash: Quad-Level Cell (QLC) NAND Flash is a relatively new type of flash memory that offers higher capacity and lower cost per bit than other types of NAND flash. QLC NAND flash-based arrays are growing in popularity as the cost of QLC NAND flash continues to drop.

Market Consolidation: The flash-based array market has seen significant consolidation in recent years, with larger vendors acquiring smaller vendors to expand their product portfolios. For example, Dell acquired EMC in 2016, which included its subsidiary VMAX, and Pure Storage acquired Compuverde in 2019.

Growing interest in software-defined storage: Software-defined storage (SDS) is a storage architecture that separates the software that manages storage from the underlying hardware. Many vendors are focused on providing SDS solutions for flash-based arrays to increase flexibility and scalability.

Growth of all-flash arrays: All-flash arrays (AFAs) are storage systems that use only flash memory for storage. AFAs are becoming increasingly popular because they provide high performance, low latency, and are suitable for a wide range of workloads.

Get More insights on this: https://www.persistencemarketresearch.com/market-research/flash-based-array-market.asp

[technicalguide]

Why Is NAND Flash Displacing Hard Disk Drives?

According to Markets and Research, the non-volatile memory market is expected to be over $81 billion in 2022, with an annual growth rate of 9.96%. NAND Flash is currently the fastest growing storage technology. This is mainly driven by the demands of digital cameras, smartphones and laptop computers, although some traditional markets, such as MP3 players, USB sticks and even tablets, are declining as their roles are taken over by other devices. At the same time, solid state drives (SSDs) are making inroads into the server market currently dominated by hard disk drives (HDDs).

NAND Flash is ideal as mass storage for mobile devices because of its high speed, low power, small size, light weight and physical robustness (with no moving parts). Many of these characteristics, especially those relating to performance, are also valuable for applications in desktops and servers. For example, an SSD can provide 15,000 to 30,000 I/O operations per second, compared with around 150 for a disk drive.

NAND Flash is displacing hard disk drives According to Markets and Research, the non-volatile memory market is expected to be over $81 billion in 2022, with an annual growth rate of 9.96%. NAND Flash is currently the fastest growing storage technology. This is mainly driven by the demands of digital cameras, smartphones and laptop computers, although some traditional markets, such as MP3 players, USB sticks and even tablets, are declining as their roles are taken over by other devices. At the same time, solid state drives (SSDs) are making inroads into the server market currently dominated by hard disk drives (HDDs).

NAND Flash is ideal as mass storage for mobile devices because of its high speed, low power, small size, light weight and physical robustness (with no moving parts). Many of these characteristics, especially those relating to performance, are also valuable for applications in desktops and servers. For example, an SSD can provide 15,000 to 30,000 I/O operations per second, compared with around 150 for a disk drive.

Local versus cloud storage

There are two broad classes of mass storage: local data in devices such as smartphones or computers, and enterprise servers and data centres for the cloud. For local storage, SSDs are on the way to replacing HDDs. Considering the mobile segment from phones to notebooks, the majority of systems today is based on NAND Flash. As for Enterprise and data centres storage tiers have established using a mix of SSD and HDD.

HDDs may continue to dominate enterprise storage for some time, as hard disk technologies remain cheaper per byte (currently about $0.025/GB vs $0.25/GB for Flash). SSDs are already being used in enterprise servers, particularly where extremely fast access is required, such as in database applications. There is a market at very high price points for extremely high speed, higher than standard SSDs. The higher performance of SSDs can reduce the number of drives needed, cutting system costs. This is because the higher performance provides better support for compression and deduplication, which can reduce the total capacity required. This will, however, be offset by the increasing demand for data storage, so total storage needs will continue to grow.

The higher cost means Flash storage is often used as a complement to disks. Hybrid devices which combine the speed and power advantages of Flash with the low cost/byte of hard drives are growing in popularity in the server market. New technologies, such as multi-level cells and 3D Flash, and increased production volumes will continue to bring prices down. However, there has been a recent increase in price because of high demand coinciding with falling production capacity as manufacturers switch some of their production lines over to 3D Flash. In the longer term, the price drops may be faster than expected from Moore’s law because of the capacity improvements provided by these new technologies.

One feature of Flash memory that always seems to be brought up is the limited number of program/erase cycles that a Flash cell can endure. A single-level cell (SLC) Flash memory may have a lifetime of about 50,000 to 100,000 program/erase cycles. Some more recent 3D Flashes, which are more likely to be built-in into your SSD, may be in the range of 2,000 to 5,000 program/erase cycles. To put this in perspective, if you were to completely fill and delete your 256 GB SSD once every day, it would take you more than 10 years to reach the cycle limits. A hard disk would probably not survive that long either. That is a very rough estimate, which doesn’t take into account the fact that extra writes are needed to manage the storage allocation, over-provisioning of capacity in Flash memories and administrative overhead especially for small random write traffic. All of these factors are included in the concept of write amplification and refer to the fact that the physical write activity for the NAND Flash is higher the user activity. However, with a good controller SSDs are delivering life-times at least as good as hard drives already. Additionally, SSD offer advantages in speed, low power and high reliability. As prices fall, these factors will continue to drive the pace of HDD replacement.

[govindhtech]

Inland SSD 1TB TN470 Powerful Budget Users

Inland SSD 1TB TN470

With a balanced performance profile, the Inland TN470 SSD is aimed towards a mainstream market and functions well in desktop, laptop, and even PS5 devices. With no DRAM and a more affordable price point, the TN470 might become the new value leader. The best SSDs now face additional competition because of its single-sided design, which is the cherry on top.

When Inland releases a new SSD, you can be sure that the technology is truly revolutionizing the SSD market. As one of many resellers managing the retail side of the business, Inland contracts out to drive production, and its status as Micro Center’s house brand guarantees builder popularity. The TN470 SSD takes the place of the well-liked low-cost TN450 SSD, providing a faster, more recent controller along with quick flash.

Inland 1TB NVMe SSD

Software support is not something that Inland provides, but its physical location and longer, six-year warranty may improve the customer experience. You can typically find hardware that is identical to that of the larger brands at a lower cost. Therefore, it should come as no surprise that Inland designed the TN470 with the most popular capacities in mind, with the 2TB model being the most desirable. Although they would prefer to see more 4TB options in this market and the Inland SSD 1TB model may be more difficult to sell, it’s difficult to argue against a drive that perfectly hits the 2TB sweet spot.

The Corsair MP600 Elite is the first drive of its kind, but the Inland TN470 isn’t the first, and it won’t be the last either, as many other manufacturers are likely to release gear of a similar nature. Even some older Inland SSD 1TB models are receiving this hardware update; however, they would rather see a name change than a specification change under the same name.

This hardware combination should also be available in M.2 2230 versions in due course, which is good news for owners of Steam Decks and portable systems. Many options are preferable to the few excellent budget M.2 2280 options that currently exist, such as the Crucial T500 or Team group MP44. It may seem impossible to compete with Maxio MAP1602-based drives like the MP44, but Phison has demonstrated rapid and effective performance with the E27T controller, which powers the TN470. The updated BiCS6 flash also significantly improves performance.

Inland SSD 2TB

Similar to the Corsair MP600 Elite, the Inland TN470 is offered in Inland SSD 1TB and 2TB capacities. The TN470’s hardware will also be used in the upcoming Sabrent Rocket 4 update. There are no other models of the TN470 with a pre-attached heatsink, unlike the MP600 Elite. The TN470 costs $79.99 and $136.99 on Amazon at the time of review, but if you live close to a Micro Centre, you can find it for less money. Compared to the MP600 Elite, these prices are $5–$10 less, but the Corsair drive includes a heatsink.

The TN470 is rated for sequential read and write speeds of up to 7,300 / 6,400 MB/s and random read and write IOPS of up to 900K / 900K. This compares favourably to competing drives like the Lexar NM790, Teamgroup MP44, or Silicon Power US75 that have similar but distinct hardware. This is a competitive market, particularly when the Crucial T500 and older PCIe 4.0 SSDs are taken into account. Despite having a capacity of only 600TB of writes per TB, Inland’s warranty is unique in that it lasts for six years instead of the typical five.

Though it’s hard to forecast the future of any particular SSD model, they can make the following assumptions about the Inland TN470:

Sustained Pertinence

Although PCIe Gen 4 is still a relatively new standard, it is expected to remain the common interface for some time to come. This indicates that the TN470 will work well with high-end systems for a considerable amount of time.

The TN470, a cost-effective Gen 4 option, could gain even more appeal if the cost of TLC NAND flash memory decreases.

Possible Drawbacks

It is possible that SSDs with faster speeds and longer lifespans, utilising PCIe Gen 5 or even Gen 6, will appear, making the TN470 seem inferior.

The DRAM less design may eventually become more of a drawback for workloads that significantly strain the drive’s endurance.

Overall Prognosis

A solid position is held by the Inland TN470 in the present market. Though it’s not likely to go out of style right away, in a few years it might not seem as impressive due to new developments. It should still be an attractive choice for consumers on a tight budget who don’t require the most advanced technology in terms of speed or endurance, though, considering its price range and respectable performance.

Read more on Govindhtech.com

[insideusnet]

Western Digital, Kioxia in Advanced Talks for Merger - Bloomberg News : Inside US

(Reuters) – Memory chip maker Western Digital Corp and Japan’s Kioxia Holdings Corp are in advanced talks for a possible merger which will involve a dual-listing, Bloomberg News reported on Friday. A combined Kioxia-Western Digital would control a third of the NAND flash market, putting it on par with South Korea’s Samsung Electronics . In Japan, the two companies jointly produce NAND chips,…