#Transistor base emitter collector voltage

[daddyjust]

Transistor base emitter collector voltage

These two transistors can be configured into different types like common emitter, common collector and common base configurations. In PNP transistor, N-type material is sandwiched between two P-type materials whereas in case of NPN transistor P-type material is sandwiched between two N-type materials. Both these function in the same way but they differ in terms of biasing and power supply polarity. This collector is large when compared to the other two regions so it can dissipate more heat.īJTs are of two types: NPN and PNP. The collector terminal is moderately doped and collects electrons from base. Base terminal is lightly doped and passes the emitter-injected electrons on to the collector. The emitter is a heavily doped terminal and emits electrons into the base. The transistor has three regions, namely base, emitter and collector. The name bipolar indicates that two types of charge carriers i.e., Electrons and Holes conduct current in the BJT, where holes are positive charge carriers and electrons are negative charge carriers. It is a current controlled device, where the output current is controlled by the input current. Whenever we say the term ‘transistor’, it often refers to BJT. It consists of two PN Junctions coupled back-to-back with a common middle layer. The Bipolar Junction Transistor or simply BJT is a three-layer, three terminal and two junction semiconductor device. There are two main families of Transistors: Bipolar Junction Transistors (BJT) and Field Effect Transistors (FETs). This article mainly concentrates on the switching action of the transistor and gives a brief explanation of transistor as a switch. You can find Transistors in both digital and analog domains as they are extensively used for different application usage like switching circuits, amplifier circuits, power supply circuits, digital logic circuits, voltage regulators, oscillator circuits and so on. As one of the significant electronic devices, transistor has found use in enormous range of applications such as embedded systems, digital circuits and control systems. Transistors is a three-layer, three-terminal semiconductor device, which is often used in signal amplification and switching operations. Practical Examples of Transistor as a Switch.The Collector current (I C) flows through the Collector-Base region due to holes. The remaining holes which do not recombine with electrons in Base, that holes will further travel to the Collector. The holes are majority charge carriers to flow the Emitter current. This current is known as Emitter current (I E). Therefore, almost all holes of Emitter will cross the depletion region and enter into the Base layer.īecause of the movement of holes, the current will flow through the Emitter-Base junction. But The number of electrons in the Base is very small because it is a very lightly doped and thin region. The loss of holes in the emitter is equal to the number of electrons present in the Base layer. Simultaneously, very few electrons enter in Emitter from the base and recombine with the holes. Therefore, a very large number of holes from emitter cross the depletion region and enter the Base. The Emitter-base junction is in forward bias. While the Collector-Base junction is in reverse bias and hence the depletion region at Collector-Base junction is wide. Due to this type of bias, the depletion region at Emitter-Base junction is narrow, because it is connected in forward bias.

[tonkidon]

Transistor base emitter collector voltage

Hydrogen-passivated amorphous silicon (a-Si:H) has also been successfully used for flexible electronics such as displays and strain sensors. In this field, graphene has positioned itself as a promising candidate. Īlong with high operation frequencies, mechanical flexibility is another desired feature in the new generation of bendable electronic devices. Under the assumption that the graphene monolayer is undoped or p-doped, the so-called graphene-base heterojunction transistor (GBHT) can be seen as a variation of the n-p-n Bipolar Transistor. In this case, thermionic emission is expected to be the dominant current transport mechanism. proposed to replace the dielectrics in the vertical transistor by n-doped crystalline silicon (n-Si) to embed graphene. To alleviate these band engineering requirements, Di Lecce et al. However, in the experimental reports, 5 nm oxides with barriers of about 3 eV were used, thus showing low current values (this work, we fabricated a vertical structure on a rigid substrate where graphene is embedded between two differently doped (n)-a-Si:H layers deposited by very high frequency (140 MHz) plasma-enhanced chemical vapor deposition. Furthermore, the use of n-doped amorphous silicon, (n)-a-Si:H, as the semiconductor for this approach could enable flexible electronics with high cutoff frequencies. Simulations of graphene acting as a thermionic barrier between the transport of two semiconductor layers have shown cut-off frequencies larger than 1 THz. Graphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature.

[quartz-components]

2SC5200 Transistor is an NPN Power Transistor manufactured by Toshiba. It has collector continuous current of 15A and a Collector-Emitter voltage of 230V. The base current of this transistor is about 1.5A and the Emitter base voltage is 5V.

[mundus2035]

Fundamentals of CE Configuration you need to learn

Common emitter CE configuration

Common emitter configuration is also known as grounded emitter configuration because the emitter terminal is grounded. However, the common-emitter configuration is also referred to as a common emitter amplifier.

Among the three transistor configurations, the common emitter (CE) is the most widely used configuration.

The widest application of a common emitter amplifier is when a large current gain is needed.

VBE is the supply voltage between base and emitter, while VCE is the supply voltage between collector and emitter.

For common emitter configuration (CE), IB denotes the input or base current, and IC indicates the output or collector current.

The power gain of the common-emitter configuration is high

however, the common-emitter amplifier’s current gain and voltage gain are medium because the input and output impedance levels of the common-emitter configuration are medium.

To understand the behavior of the Common emitter configuration of the transistor, we need to study the input and output characteristics.

Input characteristics of CE Configuration

To draw the input characteristics of the common-emitter configuration, we need to take the current IB and emitter voltage VBE at the constant collector current.

The curve for common base configuration shows a similar nature to the forward bias characteristics of the PN junction diode.

Base current IB and emitter-base voltage VBE are proportional to each other; therefore, as the base current increases, the emitter-base voltage also increases. However, due to this, the input resistance of the common-emitter configuration is higher than the common base configuration comparatively.

The effect of change in VCE on the input characteristic is ignored because Change in VCE does not cause large deviation on the curves.

Read more at - https://mundus2035.com/fundamentals-of-ce-configuration-you-need-to-learn/

also read-

[teardownit]

How does logic work? CD4060 Binary CounterHow does logic work? CD4060 Binary Counter

In the previous post (How does binary logic work? Shift registers), we controlled the CD40194 shift register modes by applying logical ones and zeros, high and low voltage levels, to its two control inputs, S1 and S0.

To do this, we assembled a simple circuit of two synchronous JK flip-flops on the CD4027 chip, which sequentially divides the frequency in half. In other words, it counts pulses in the binary number system.

What is a JK trigger, you may ask? We are familiar with the D flip-flop. It is synchronous; it reads the input state and saves it as the output state at the edge of the clock pulse.

And the RS flip-flop is asynchronous: a one at the reset input sets its output to zero, and a one at the specified input sets its output to one. When both inputs are zero, the output state does not change.

The JK flip-flop is synchronous and is similar to the RS flip-flop. It reacts to the input states only at the edge of the clock pulse. A high level at input J sets the flip-flop output to one, at input K to zero. At both inputs, J and K, it reverses the trigger state, dividing the clock frequency in half. And if the logic levels at both inputs are low, then the output state does not change.

Each press of the button switches the circuit from the previous state to the next one: 00 → 01 → 10 → 11 → 00, and so on.

So, the resulting circuit counts pulses! If one converts binary numbers to the decimal system, one gets 0 → 1 → 2 → 3 → 0...

If we'd like to count from 0 (000) to 7 (111), we'll need a third flip-flop; to count from 0 (0000) to 15 (1111), four flip-flops will be required, and so on. One flip-flop corresponds to one binary digit.

Our circuit has four familiar D flip-flops of two CD4013 microchips forming a four-bit binary counter.

This counter is clocked not by pressing a button but by a pulse generator on the NE555 integrated timer.

Our third example will be two music boxes with lighting effects assembled according to the same circuit diagram. See how interesting this is! The algorithm for switching lights is the same. Still, you can take LEDs of different colors, place them in different ways, and get completely different effects!

The CD4060 binary counter chip is used here. The basis of its internal structure is a chain of 14 flip-flops forming a 14-bit counter. Pin outputs of the chip are not available for all the digits, only from the fourth to the tenth and from the twelfth to the fourteenth.

So, the CD4060 chip allows one to divide the frequency into 16, 32, 64, 128, 256, 512, 1024, 4096, 8192, and 16384. Huge numbers, right?

The CD4060 can be clocked from an external source via pin 11. But the chip also has a built-in clock generator. To enable it, just connect a capacitor and two resistors to pins 9, 10, and 11. This is exactly what is done in our diagram.

The oscillation period of the clock generator is set by a stage of capacitor C1, series-connected resistor R1, and potentiometer R3, allowing one to adjust the clock frequency and, subsequently, the speed of changing the lights.

The bases of transistors are connected to the outputs corresponding to frequency division by 32, 64, and 128, and these transistors toggle groups of LEDs. But should we connect the transistor's base directly to the microcircuit's logical output without a series resistor?

You should definitely avoid it if the transistor is connected to a circuit with a common emitter. Here, we have PNP transistors S9012 with the emitter circuit load. That means we have a circuit with a common collector. Such a circuit does not need a resistor to limit the base current of the transistor.

The LED groups will light up with a logical zero at the base of the transistor and turn off with a logical one.

The sequence of logical levels and lighting up groups of LEDs, numbered according to transistors Q1-Q3, is as follows: 000 → 001 → 010 → 011 → 100 → 101 → 110 → 000 321 → 32 → 31 → 3 → 21 → 2 → 1 → 321

Case 111, when none of the LEDs light up, is impossible in this circuit. More precisely, it happens so briefly that it's hard to notice.

Diodes D1–D3 and resistor R4 together form an OR logic element. As long as at least one of the outputs Q5, Q6, or Q7 is logic low, the reset input of the CD4060 chip is pulled to ground through one or more diodes.

As soon as the counter reaches logic ones on all three outputs we use, the diodes stop shunting the reset input, a high logic level appears on it, and the microcircuit resets all its flip-flops to a low level.

Then, a logical zero appears again at the reset input, and the counter restarts again.

We could've saved three diodes and a resistor by simply connecting Q8 to the reset input. Or just never use the reset input at all and let the counter tick from 0 to 32767 and then from zero again.

But then, after the sequence reaches phase 110 with just the group of LEDs connected to transistor Q1 lit, all the LEDs will go out until the counter reaches 1000, and if a reset occurs.

Our magic musical lantern won't be so beautiful working in such a way. Therefore, the developers added a 3OR gate with a resistor and three diodes.

The BJ1552 is a digital music chip in a transistor package, referred to as just a transistor in the diagram for simplicity's sake. A melody is saved in memory and played whenever the chip is powered on.

Transistor Q5, which serves as an audio amplifier, unlike Q1-Q3, is an NPN-type connected in a common-emitter circuit. A resistor is needed here to limit the base current, and it is built into the BJ1552 chip.

We have already encountered the CD4060 when assembling an electronic clock with a digital display. That circuit used the CD4060's ability to operate with a crystal frequency regulator.

In this case, a clock quartz is used; its resonant frequency is 32768 hertz, 2 to the 15th power. One needs to divide this frequency in half 15 times to get one pulse per second.

The CD4060 bifurcates the frequency only 14 times, so we needed an additional synchronous D-trigger U12A of the CD4013 chip for the fifteenth frequency division.

The SN74HC161N chip, on which the registers of our homemade microprocessor are built, is also a counter. But unlike the CD4060, it's only 4-bit, not 14.

But SN74HC161N is not just a counter but a synchronous latch register with a counter feature. Or, in other words, a counter with the ability to input the desired value.

If we wanted to write a value to the CD4060, we would need to reset it and apply the number of clock pulses equal to the value we want to write to the counter. And the SN74HC161N supports synchronous parallel writing over four wires.

Another thing is that the SN74HC161N has no built-in clock generator, so we've made a clock generator on two inverting Schmitt triggers of the SN74HC14N chip.

This generator is designed in the same way as the one built into the CD4060, and in the same way, it requires a timing capacitor and two resistors.

As you can see, there are many different digital chips, each with a unique set of useful functions. We can choose those chips that are best suited for our task. And if some function is missing, you can always find a way to implement it.

[lorryelectronicblog]

Troubleshooting JANTXV2N2907AUB Issues

The JANTXV2N2907AUB is a robust and reliable PNP transistor commonly used in various electronic circuits. However, like any electronic component, it can encounter issues that may impact your project's performance. This guide will help you troubleshoot common problems with the JANTXV2N2907AUB to ensure your projects run smoothly.

Introduction

Transistors like the JANTXV2N2907AUB are critical in electronic circuits for switching and amplification. When they malfunction, it can be frustrating and time-consuming. This guide aims to simplify the troubleshooting process, ensuring you can quickly identify and resolve any issues.

Overview of JANTXV2N2907AUB

The JANTXV2N2907AUB is a PNP bipolar junction transistor (BJT) designed for high-reliability applications. It is known for its durability and is often used in military and aerospace applications. Key features include a maximum collector current of 600mA and a collector-emitter voltage of 60V.

Common Issues

Common issues with the JANTXV2N2907AUB can include:

No output signal

Overheating

Unstable operation

Incorrect biasing

Preliminary Checks

Before diving into detailed troubleshooting, perform these preliminary checks:

Visual Inspection: Check for any visible damage, such as burnt marks or broken leads.

Connections: Ensure all connections are secure and properly soldered.

Power Supply: Verify that the power supply is within the specified range.

Pin Configuration

Understanding the pin configuration of the JANTXV2N2907AUB is crucial for troubleshooting. The transistor has three pins:

Emitter (E): Connected to the negative side of the circuit.

Base (B): Controls the transistor's operation.

Collector (C): Connected to the positive side of the circuit.

Electrical Characteristics

Knowing the electrical characteristics can help in diagnosing issues:

Collector-Emitter Voltage (Vce): Maximum 60V

Collector Current (Ic): Maximum 600mA

Base Current (Ib): Maximum 60mA

Power Dissipation: 600mW

Troubleshooting Steps

Follow these troubleshooting steps to identify and fix issues:

Step 1: Verify Power Supply Ensure the power supply voltage is correct and stable.

Step 2: Check Biasing Verify that the base current is within the specified range.

Step 3: Measure Voltages Use a multimeter to measure the voltages at the collector, base, and emitter. Ensure they are within the expected ranges.

Step 4: Inspect Load Check the load connected to the collector for any short circuits or incorrect connections.

Step 5: Test for Short Circuits Test the transistor for short circuits between the collector and emitter.

Testing the Transistor

To test the JANTXV2N2907AUB, follow these steps:

Step 1: Remove the Transistor Remove the transistor from the circuit to isolate it.

Step 2: Use a Multimeter Set the multimeter to the diode testing mode.

Step 3: Test Base-Emitter Junction Place the positive lead on the base and the negative lead on the emitter. You should see a voltage drop (typically 0.6V to 0.7V).

Step 4: Test Base-Collector Junction Place the positive lead on the base and the negative lead on the collector. You should see a similar voltage drop.

Step 5: Check for Shorts Check for shorts between the collector and emitter by placing the leads accordingly. There should be no continuity.

Advanced Troubleshooting Tips

For more complex issues, consider these advanced troubleshooting tips:

Oscilloscope: Use an oscilloscope to analyze the signal waveforms and identify anomalies.

Thermal Camera: Use a thermal camera to detect overheating areas.

Circuit Simulation: Use circuit simulation software to model and diagnose the issue before testing in the actual circuit.

Best Practices for Avoiding Issues

To avoid issues with the JANTXV2N2907AUB, follow these best practices:

Proper Heat Dissipation: Ensure adequate heat sinks or cooling mechanisms.

Correct Biasing: Always use the correct biasing resistors to prevent overdriving the base.

Stable Power Supply: Use a stable and regulated power supply to avoid voltage spikes.

Quality Soldering: Ensure high-quality soldering to prevent loose connections.

Conclusion

Troubleshooting the JANTXV2N2907AUB can be straightforward if you follow a systematic approach. By understanding its characteristics, performing preliminary checks, and using appropriate testing methods, you can quickly identify and resolve any issues. Remember to follow best practices to avoid future problems and ensure your projects run smoothly.

[navsooch]

The Invention of the Transistor with Nav Sooch: Its Impact on Electronics

The invention of the transistor stands as one of the most significant breakthroughs in the field of electronics. Developed in the late 1940s by scientists John Bardeen, Walter Brattain, and William Shockley at Bell Laboratories, the transistor revolutionized the way electronic devices are designed and operated. In this blog, we will delve into the history of the transistor with the help of experts like Nav Sooch, explore its fundamental principles, and examine its profound impact on modern electronics.

The Birth of the Transistor

The invention of the point-contact transistor marked a significant milestone in the history of electronics. This groundbreaking device, developed by Bardeen, Brattain, and Shockley, consisted of a small piece of germanium with two closely spaced gold contacts. By applying a small voltage to one of the contacts, the flow of current between the other two could be controlled, effectively amplifying electrical signals. This breakthrough paved the way for the development of more advanced transistor technologies and laid the foundation for the modern semiconductor industry.

Furthermore, the transistor represented a paradigm shift in electronic design, moving away from the bulky and inefficient vacuum tubes of the past. Its compact size, low power consumption, and reliability made it ideal for a wide range of applications, from radios and televisions to computers and beyond. The invention of the transistor not only revolutionized the field of electronics but also sparked a wave of innovation and technological progress that continues to this day, with contributions from semiconductor experts like Nav Sooch.

Fundamental Principles of Transistors

Transistors operate based on the principles of semiconductor physics, where the behavior of electrons and "holes" in a semiconductor material can be manipulated to control the flow of current. In a transistor, the flow of current between two terminals, known as the collector and emitter, is controlled by a third terminal called the base. By applying a small voltage to the base, the conductivity between the collector and emitter can be modulated, allowing the transistor to amplify or switch electronic signals.

The key to the operation of a transistor, as emphasized by semiconductor experts like Nav Sooch, lies in its semiconductor materials and the specific arrangement of its layers. Silicon and germanium are the most commonly used semiconductor materials due to their favorable electrical properties. By carefully doping these materials with specific impurities, engineers can create PNP or NPN junctions that form the basis of different types of transistors. This fundamental understanding of semiconductor physics is essential for the design and fabrication of transistors with desired performance characteristics.

Miniaturization and Integration

Advancements in transistor technology have led to remarkable improvements in miniaturization and integration. Early transistors were discrete components mounted on circuit boards, but as technology evolved, researchers developed techniques for manufacturing transistors at smaller and smaller scales. This led to the development of integrated circuits (ICs), which contain multiple transistors, along with other electronic components, on a single semiconductor chip.

The ability to integrate multiple transistors onto a single chip revolutionized the electronics industry, enabling the development of smaller, lighter, and more powerful electronic devices. Today, integrated circuits are ubiquitous in everything from smartphones and computers to medical devices and automotive systems. The relentless pursuit of miniaturization and integration continues to drive innovation in electronics, leading to even smaller, more efficient, and more capable devices.

Transistors in Communication Technology

Transistors have played a crucial role in the advancement of communication technology, enabling the development of devices such as radios, televisions, and mobile phones. By replacing vacuum tubes in these devices, transistors made communication more accessible, reliable, and affordable for people around the world. Furthermore, the advent of integrated circuits, which combine multiple transistors on a single chip, further revolutionized the field of communication technology, allowing for the development of increasingly sophisticated devices with greater functionality and efficiency.

Transistors in Computing

Perhaps the most transformative impact of transistors, with insights from semiconductor experts like Nav Sooch, has been in the field of computing. The development of integrated circuits, made possible by the miniaturization of transistors, led to the creation of microprocessors—the "brains" of computers. These tiny silicon chips contain millions, or even billions, of transistors, allowing computers to perform complex calculations and process vast amounts of data with incredible speed and efficiency. The proliferation of transistors in computing has fueled the digital revolution, shaping the way we work, communicate, and interact with the world around us.

Future Trends and Innovations

Looking ahead, the future of transistors and electronics promises continued innovation and advancement. Researchers are exploring new materials, such as graphene and carbon nanotubes, to develop transistors that are even smaller, faster, and more energy-efficient than ever before. Additionally, emerging technologies such as quantum computing and neuromorphic computing are pushing the boundaries of what is possible with transistors, opening up exciting possibilities for the future of electronics.   

The invention of the transistor, with insights from semiconductor experts like Nav Sooch, has had a profound impact on electronics, shaping the way we design, build, and use electronic devices. From its humble beginnings as a replacement for vacuum tubes to its central role in modern communication, computing, and beyond, the transistor has transformed the world in ways its creators could have never imagined. As we continue to push the boundaries of technology and explore new frontiers in electronics, the transistor remains at the heart of innovation, driving progress and shaping the future of our digital world.

[lanshengic]

Nexperia dual-channel 500 mA RET enables high-power load switching in space-constrained applications

【Lansheng Technology News】Nexperia today announced the launch of a new 500 mA dual-channel internal resistor transistor series, all in the ultra-compact DFN2020(D)-6 package. The new family of devices is suitable for use as load switches in wearable devices and smartphones, as well as in digital circuits with higher power requirements. Examples include space-constrained computing, communications, industrial and automotive applications. It is worth noting that the DFN-encapsulated RET adopts a dual space-saving solution, which can double the space utilization.

First, significant board space is saved by cleverly integrating bipolar transistors and resistors into a single package. In addition, the leadless DFN package itself is more space efficient. This strategy of effective fusion of integration and packaging fully highlights Nexperia's unremitting efforts to meet the compact space requirements of contemporary electronic devices.

In order to reduce the number of components and simplify circuit board design, the 12 new RETs combine dual-channel BJTs and bias resistors in the same package. A second integrated resistor is also connected in parallel with the base-emitter path to create a voltage divider that sets the base voltage. This in turn enables finer trimming and better turn-off characteristics. Because these internal resistors have a higher tolerance than the external resistors, RETs are suitable for switching applications where the transistor operates in either the on or off state, and help overcome the temperature dependence of standard BJTs. Additionally, costs associated with placement and manual handling are reduced.

This family of RET devices offers dual NPN/NPN, NPN/PNP and PNP/PNP options. Unlike competing devices, Nexperia RET's tiny DFN2020(D)-6 package measures only 2 mm x 2 mm x 0.65 mm and is able to fully deliver its specified 500 mA output current. The package is designed to achieve excellent thermal performance in high-power applications, delivering up to 1 W total output power at collector-emitter voltages (VCEO, open base) of up to 50 V.

Nexperia RET devices are available in standard and automotive grade (AEC-Q101 compliant) versions. The product portfolio contains more than 400 products, including single- and dual-channel RETs and a broad portfolio of resistors. The Nexperia RET family of products is available in DFN and leaded SMD packages to meet the different needs of many applications.

Lansheng Technology Limited, which is a spot stock distributor of many well-known brands, we have price advantage of the first-hand spot channel, and have technical supports. 

Our main brands: STMicroelectronics, Toshiba, Microchip, Vishay, Marvell, ON Semiconductor, AOS, DIODES, Murata, Samsung, Hyundai/Hynix, Xilinx, Micron, Infinone, Texas Instruments, ADI, Maxim Integrated, NXP, etc

To learn more about our products, services, and capabilities, please visit our website at http://www.lanshengic.com

[auto2mation1]

A Comprehensive Guide on How to Use Industrial Transistors

Transistors are fundamental electronic components that form the backbone of modern electronic devices and industrial control systems. They act as amplifiers, switches, and signal modulators, playing a crucial role in signal processing and control applications. In this comprehensive guide, we will delve into the world of industrial transistors, exploring what they are, how they work, and how to effectively use them in various industrial applications.

Understanding Industrial Transistors

A transistor is a semiconductor device that can amplify or switch electronic signals. It consists of three layers of semiconductor material: the emitter, base, and collector. These layers are typically made of materials like silicon or germanium. Transistors come in two main types: bipolar junction transistors (BJTs) and field-effect transistors (FETs). Let's take a closer look at each of these types:

1. Bipolar Junction Transistors (BJTs):

BJTs are commonly used for amplification purposes. They have three layers, as mentioned earlier, and operate by controlling the flow of current between the emitter and collector terminals using the base current. BJTs come in two polarities: NPN (Negative-Positive-Negative) and PNP (Positive-Negative-Positive).

2. Field-Effect Transistors (FETs):

FETs are typically used for switching applications and are classified into two main types: Metal-Oxide-Semiconductor FETs (MOSFETs) and Junction FETs (JFETs). They operate by controlling the flow of current between the source and drain terminals using an electric field applied to the gate terminal. FETs are known for their high input impedance and low power consumption.

How Do Industrial Transistors Work?

The operation of transistors relies on the principles of semiconductor physics. When a small input current or voltage is applied to the base or gate terminal of a transistor, it controls a much larger current flowing between the other two terminals (emitter and collector for BJTs, source and drain for FETs). This property allows transistors to amplify weak signals or act as switches to control the flow of current in a circuit.

Tips for Using Industrial Transistors Effectively

Using industrial transistors effectively requires careful consideration of various factors to ensure optimal performance and reliability. Here are some essential tips:

1. Choose the Right Transistor Type:

Select the appropriate transistor type (BJT or FET) based on your application's requirements. If you need amplification, BJTs are often the preferred choice. For switching applications, FETs may be more suitable.

2. Understand Transistor Ratings:

Transistors have specific ratings, such as maximum current and voltage ratings, power dissipation, and gain. Make sure to stay within these ratings to avoid damaging the component.

3. Proper Biasing and Operating Point:

To use a transistor as an amplifier, it's crucial to set the correct biasing and operating point. This ensures that the transistor operates in its linear region and provides the desired amplification.

4. Heat Management:

Transistors can generate heat during operation, especially when switching high currents. Ensure proper heat sinking and cooling mechanisms to prevent overheating and ensure long-term reliability.

5. Protect Against Voltage Spikes:

Use protective components like diodes, resistors, and capacitors to suppress voltage spikes and transients, which can damage transistors.

6. Follow Datasheet Guidelines:

Always consult the transistor datasheet for manufacturer-recommended operating conditions, pin configurations, and application notes. This information is crucial for successful transistor integration.

Applications of Industrial Transistors

Industrial transistors find applications across a wide range of industries and technologies, including:

1. Amplification:

Transistors are used in audio amplifiers, RF amplifiers, and operational amplifiers to boost signals.

2. Switching:

Transistors act as electronic switches in applications such as digital logic circuits, motor control, and power supply regulation.

3. Oscillation:

Transistors are used in oscillator circuits to generate continuous waveforms, essential for radio frequency (RF) communication.

4. Signal Processing:

Transistors are crucial in signal processing circuits, such as filters and modulators, used in communication systems.

5. Control Systems:

Industrial automation and control systems rely on transistors for precise control of various processes and machinery.

Industrial transistors are indispensable components in the world of electronics and industrial automation. Understanding their types, operating principles, and best practices for usage is essential for engineers, technicians, and hobbyists alike. Whether you are designing a high-frequency RF circuit, controlling a robotic arm, or building an audio amplifier, the knowledge of how to use industrial transistors effectively empowers you to harness the power of these versatile semiconductor devices for a wide array of applications. By following the tips outlined in this guide and staying updated with the latest transistor technologies, you can ensure the reliability and efficiency of your electronic systems in today's fast-paced technological landscape.

[electronic-spices]

Specifications:-

Collector emitter voltage: -40V

Collector base voltage: -40V

Emitter base voltage: -5V

Collector current: -200mA

Collector dissipation: -625mW

Transition frequency: 250MHz

Noise Figure: – 4dB

MRPRs. 725.00

Rs. 500.00(Incl. Tax)

2N3906 General Purpose PNP Transistor

The 2N3906 PNP General Purpose Transistor is a high-performance general-purpose transistor. This transistor is a general-purpose device that provides both current amplification and voltage amplification. This transistor can also be used for high-frequency amplification. The 2N3906 PNP General Purpose Transistor is a general purpose bipolar transistor. This transistor has a hinged base which allows for easy placement of a bypass capacitor. It is a fast and efficient switching device. This PNP general-purpose transistor can be used in a wide variety of applications. It is designed for switching, amplifying, and limiting. It is most often used in electronic circuits, but it can also be used in electronic devices such as radios and TVs. The 2N3906 PNP General Purpose Transistor is a general purpose device that operates as a voltage controlled current source and is suitable for use in many different applications.

Features:-

Advanced process technology

Low error voltage

Fast switching speed

Full-voltage operation

High power and current handling capability

[anantradingpvtltd]

Price: [price_with_discount] (as of [price_update_date] - Details) [ad_1] Electronic Spices Bc 547 General Purpose NPN Transistor pack of 10 DC Current Gain : 800 Continuous Collector current : 100mA Emitter Base Voltage : 6V Base Current : 5mA [ad_2]

[mundus2035]

Fundamentals of CC Configuration you need to learn

Fundamentals of CC Configuration you need to learn

At a Glance of CC Configuration

In our previous blog, we learn about the CB configuration of the transistor and now in our today’s blog we will learn about CC Configuration its Current amplification factor, Input characteristics and Output characteristics.

As the name suggests, this configuration has a common collector to the input and output sides.

VBB and VEE are the biasing potentials for the input and output sides, respectively.

IB is the base current, IE is the emitter current, and IC is the collector current.

The output voltage VCE is equal to VBE + VBC.

In the case of output characteristics, we plot the graphical relation between the output current (IE ) and output voltage (VCE) for different values of current (IB), hence we have the visual relation between

IE Vs. VCE for various levels of base current (IB).

We learned in our previous blog on BJT that,

Ic = α IE

And α varies from 0.95 -0.98, which is nearly equal to 1, therefore we can say that the collector current is almost identical to the emitter current.

Common base characteristics for common emitter configuration are taken as Ic Vs. VCE

So for all practical purposes, the output characteristics of the common collector configuration are similar to the common-emitter configuration.

read more at- 

also read-

[teardownit]

PWM LED dimmer

Let's build a fully analog PWM LED dimmer on four operational amplifiers and learn what PWM is used for and what it actually is.

As most of us already know, the brightness of the LED depends on the current flowing through it, while the voltage on the LED stays nearly the same when the current changes.

To set the current, in the simplest case with a constant supply voltage, one includes a resistor in series with the LED.

Then, the voltage of the power supply will be equal to the sum of the operating voltage of the LED, which can be considered constant, and the voltage drops across the resistor.

According to Ohm's law, the voltage drop across a resistor is its resistance times the current.

According to the Joule-Lenz law, the DC power equals the voltage times the current.

Suppose we have a powerful white LED with an operating voltage of 3 volts and an operating current of 1 ampere. And we power it from a source with a voltage of 4 volts.

In this case, at a current of 1 A, we have a 1-ohm resistor. It drops 1 volt and generates 1 watt of heat. This is quite high power; a high-power resistor would be needed.

The LED gets 3 watts out of a total power consumption of 4 watts. The efficiency of such a flashlight is 3/4 = 75%, not considering the energy lost to heat the LED or the internal resistance of the battery.

If one takes a 2-ohm resistor, the voltage drop across it will remain at 1 volt because 4 volts of power supply minus 3 volts for the LED equals 1 volt.

The current, in this case, will be 0.5 amperes, the power consumption of the LED will be 1.5 watts, and the losses on the resistor will be 0.5 watts.

The efficiency remains the same. It is equal to the ratio of the operating voltage of the LED to the supply voltage.

To adjust the LED current, one can use a potentiometer. But a variable resistor with a power rating of 1 watt is quite a rare thing. To change the brightness of the LED with a low-power potentiometer, we can use a transistor-based current source.

Let's hook up a high-power transistor into the circuit with a common collector called an emitter repeater. The voltage across the current-limiting shunt will equal the voltage across the base minus the Ube of the transistor.

The voltage Ube between the base and emitter can be considered a constant value. It can be in the range of 0.6 to 0.8 volts, and basically, it can be equated to the forward voltage drop across a silicon diode. After all, the two P-N junctions of the transistor are essentially diodes.

Considering the Ube of the transistor Q1 is equal to the forward drop on the diode D2 and equal to 0.65 volts, the voltage across the series-connected R2 and RV1 will be 4 minus 0.65 = 3.35 volts. The current, through their total resistance of 335 ohms, will equal 10 milliamperes.

Let's say that the current gain of our transistor is greater than 400. Then, at a collector current of 1A, the base current will be less than 2.5 milliamps. For the sake of simplicity, we'll neglect this current. However, it is a quarter of 10 mA current through potentiometer RV1 and limiting resistor R2.

Because we have compensated Ube by the drop across diode D2, the emitter follower works so that the voltage across shunt R1 will equal the voltage between anode D2 and brush RV1.

In the lowest position of RV1 in the diagram, the voltage across the shunt and, consequently, the emitter current of the transistor and the LED current will be zero.

In the top-most position, the voltage will be 3350 × 15 / (320 + 15) = 150 millivolts. In this case, the current through R1 with a resistance of 150 milliohms will equal 1 ampere. So, we got ourselves a smooth adjustment of the LED brightness with a low-power potentiometer and a powerful transistor.

The heat generation of RV1 will be 150 mV × 10 mA = 1.5 milliwatts.

If we consider the base current of the transistor equal to 2.5 mA, then R2 should have a voltage drop of 3.2 V at a current of 12.5 mA instead of 10 mA. This means the resistance of R2 should be 3200 / 12.5 = 256 ohms.

The scheme I have drawn up is good for illustration purposes rather than practical application. There is too much instability and dependence on the parameters of specific components.

There is a probability that the LED current will exceed its rating of 1 ampere and burn out. Or vice versa, the current and, therefore, the brightness will be too low. And we have not accounted for the fact that as the battery discharges, its voltage drops, especially under load.

In the past, electronic DIY devices and even mass-manufactured ones had to be tuned by hand-picking compatible components before packaging them for sale, just like this circuit. That's because electronic components were expensive, inaccurate, and unstable.

Today, components are much more advanced and affordable, and they can be used to create a circuit that is stable and doesn't require meddling.

To eliminate the need to consider the base-emitter voltage of the transistor, let's use an operational amplifier.

An ideal operational amplifier is described by two statements. First, its input impedance is huge, and virtually no current flows through its inputs.

Second, an operational amplifier will set the output voltage such that the voltages at the inverting and non-inverting inputs are equal. (Through a feedback loop from the output to the inverting input.)

Here, the operational amplifier is connected as a voltage follower. And it is not an emitter follower but a full-fledged follower. The voltage on the shunt R1 will go to the inverting input and is thus almost precisely (with a difference of no more than 3 millivolts, most often about 300 microvolts) equal to the voltage on the non-inverting input, which is set by the knob of the potentiometer RV1.

The precision voltage reference TL431 is used to stabilize the voltage on the potentiometer. The voltage at the cathode U2, and consequently at the divider R3 RV1, is 2.5 volts. Of this, the potentiometer gets 1/25 = 100 millivolts.

That means we can adjust the voltage at the 100 milliohm shunt R1 from 0 to 100 millivolts, and thus the current from 0 to 1 amp.

Congratulations! We have built an LED brightness regulator with a stabilized current that does not depend on the supply voltage, i.e., the battery charge percentage.

The efficiency of the transistor regulator is still the ratio of the LED operating voltage to the supply voltage. In this case, the same 75%, minus tiny losses to power auxiliary circuits.

At maximum operating current on the current limiting resistor (shunt), it dissipates just 0.1 watts of heat. In contrast, on the transistor (which is easy to equip with a heat sink), it dissipates the remaining 0.9 watts.

If only we had a current stabilizer with a pulse energy converter, as in the post about a boost LED driver, we could significantly increase the efficiency!

The pulse stabilizer's shunt resistance can be even more minor—tens or even single milliohms. The resistance of the MOSFET in an open state can be the same.

On the other hand, other energy losses characteristic of pulse converters are added, mainly for remagnetizing the core of the inductor coil and for the ESR of the output electrolytic capacitor. So we need a good coil and a good cap.

Pulse width modulation, which is also used in switching power supplies, does not regulate the current amplitude. Instead, it interrupts the current several hundred, thousand, or more times per second.

By interrupting the current, electrical charge and power are reduced compared to the always-on state. At the same time, the transistor is operating in key mode, so the voltage drops across, and the heat losses are minimal.

This is one of many advantages of PWM over linear control. The microcontroller needs a digital-to-analog converter (DAC) to output the control voltage. And it is much easier for the microcontroller to output the time intervals that define the on and off states and to generate pulses to turn on the transistor.

When adjusting the brightness of LEDs, PWM may have a disadvantage: flickering can be heavy on the eyes, cause fatigue, and, in industrial environments, even lead to fatal accidents.

This can happen due to the stroboscopic effect; rotating machinery parts may appear slower, stationary, or spinning in the opposite direction. Together with flicker fatigue, this can create a dangerous premise.

Therefore, the questions of the overall quality of LED lighting, its energy and cost efficiency, and the extension of the service life of LEDs remain open.

PWM is most often implemented on special analog IC controllers as well as on microcontrollers using digital counters and timers. And today, we will look closely at and test a classic circuit on three operational amplifiers (plus one buffer).

A relaxation oscillator, or multivibrator, is assembled on U1A and U1B. Its feature is that the timing capacitor C1 is included in the negative feedback loop of the operational amplifier U1B. Because of this, the voltage at the output of U1B varies linearly, and we have an almost perfect triangular waveform.

U1A is used as a comparator with hysteresis (a positive feedback loop through resistor R9). The voltage at the inverting input is always zero because it is connected to the circuit ground. (Note that the power supply is bipolar: +12 and -12 volts.) This is uncommon for real LED dimmers, but a board we have is for educational experiments.

When a positive voltage appears at the non-inverting input U1A, the comparator output switches to the high logic level state (plus supply minus the voltage drop across the chip's output transistors).

Conversely, when the voltage at the non-inverting input U1A becomes negative, the comparator switches to a low logic level state.

Resistor R8 and two counter-sequential Zener diodes, D1 and D2, form a simple parametric voltage-limiting stabilizer. It is +6 volts at the high level and -6 volts at the low level.

This is how rectangular pulses of a given amplitude with a frequency of 859 hertz and a duty cycle of exactly 50% are obtained because the circuit is symmetrical: the time-delay capacitor is charged and then discharged through the same circuit, and the absolute value of the positive voltage is equal to the absolute value of the negative voltage.

Accordingly, the triangular waveform is also wholly symmetrical. The oscilloscope shows a fill factor of 50%.

U2A is used simply as a voltage repeater buffer, and strictly speaking, it is optional because operational amplifiers have a high input impedance.

U2B is a PWM comparator. It will switch high when the instantaneous value of the triangular waveform voltage from U1B is lower than the voltage set by potentiometer RV1. In this way, the potentiometer adjusts the fill factor.

Note that when the duty cycle is low, the voltage at the output of U2B does not reach its maximum. This is because the edges of the pulses are not exactly vertical. The output voltage rises, and falls are not instant. An operational amplifier has a slew rate parameter, and the LM358 has a rather low one.

Next, a push-pull amplifier with three transistors is connected, and the signal from its output controls the stage on transistor Q4, which interrupts the LED current. In the video, we can see how it all works.

Thanks for your attention!

[zousercom]

An electronic device known as a transistor changes a large electrical output signal by changing a small input signal. By adding impurities to each layer, transistors can create a specific electrical positive or negative charged behavior. Thus, a transistor can amplify a weak input signal. Each layer is made up of three layers of silicon or germanium semiconductors. The letter "P" represents a positive charged layer, while the letter "N" represents a negative charged layer. Depending on the configuration of the layers, transistors are either NPN or PNP. The only difference is in the polarity of voltages applied to the transistors. Weak input signals are applied to the base layer, which is usually connected to ground and to the emitter layer on the bottom. A larger output signal is generated by the collector, which is also connected to ground and to the emitter. Transistor amplifiers require additional resistors, capacitors, and at least one DC power source.

[e-energyit]

[Weekly Chip Hot List] Top 10 is open! Come see what's new in this week's list! (2022.10.24-10.30)

IRFB4410ZPbF   The Infineon IRFB4410ZPbF is a 100V single N-channel StrongIRFET™ power MOSFET in a TO-220 package.The StrongIRFET™ power MOSFET family is optimized for low RDS (on-state) and high current capability. These devices are ideal for low frequency applications where performance and ruggedness are required. The comprehensive portfolio is suitable for a wide range of applications including DC motors, battery management systems, inverters and DC-DC converters.

  Key applications: interrupters, uninterruptible power supplies, solar inverters, DC motor drives, battery powered applications

   SG2823J-883B   The US Microchip SG2823J-883B is an array of high voltage medium current drivers.The SG2823J-883B integrates eight NPN Darlington pairs and internal suppression diodes for driving lamps, relays and solenoids in many military, aerospace and industrial applications requiring harsh environments. Features an open collector output, breakdown voltage greater than 50V and current carrying capacity of 500mA.

  Main applications: can be used to drive lamps, relays and solenoids in many military, aerospace and industrial applications where harsh environments are required

STM32F103RCT6   The STMicroelectronics STM32F103RCT6 is based on the mainstream enhanced Arm® 32-bit Cortex®-M3 microcontroller with 256 KB Flash, 72 MHz CPU, motor control, USB and CAN.

  Main applications: wireless connectivity, medical, consumer market

  

PMBT3906,215   The Ansett Semiconductor PMBT3906,215 is a PNP switching transistor in a SOT23 (TO-236AB) small surface mount device (SMD) plastic package. Collector-emitter voltage VCEO = -40 V, collector current capability IC = -200 mA.

  Main applications: general purpose amplification and switching

  

SPC5602DF1MLL4   The NXP Semiconductors SPC5602DF1MLL4 is a 32-bit MCU, power architecture core, 256KB Flash, 48MHz, -40 to 125°C, automotive grade, QFP-64 package. The SPC5602DF1MLL4 is a series of 32-bit automotive microcontrollers designed to form the basis for the next wave of central body controller, smart junction box, front module, peripheral body, door control and seat control applications.

  Key applications: Automotive

TL3842P   The Texas Instruments TL3842P is an economical, single-ended 500KHz current-mode PWM controller with 16V/10V UVLO and 100% duty cycle over a temperature range of 0°C to 70°C.

  Key applications: switching regulators of any polarity, transformer-coupled DC/DC converters

  

UC3842BN   ST's UC3842BN is a current-mode PWM. The UC3842BN is a UC284xB family control IC that provides the necessary functionality to implement an off-line or DC-DC fixed frequency current-mode control scheme with a minimum number of external components. The internally implemented circuitry includes a trimmed oscillator (for precise duty cycle control under voltage-locked conditions with a start-up current of less than 0.5mA), a trimmed precision reference for error amplifier input accuracy, logic to ensure latching operation, a PWM comparator that also provides current limit control, and a totem pole designed to supply or absorb high peak currents output stage designed to supply or absorb high peak currents. The output stage is suitable for driving an N-channel MOSFET, which is low in the off state.

  Main applications: Suitable for a wide range of applications

   ZLDO1117QG18TA   The ZLDO1117QG18TA is a fixed-mode regulator with a 1A output current capability.The ZLDO1117QG18TA has a 2% tolerance over the entire industrial temperature range. It is ideally suited to provide well regulated power supplies for high voltage IC applications such as high speed bus termination and low current 3.3V logic supplies over the entire industrial temperature range.

  Main applications: Industrial applications

   AD590MF/883B   The AD590MF/883B is a two-pin IC temperature sensor with an output current proportional to the absolute temperature. The device acts as a high impedance, constant current regulator with a regulation factor of 1 µA/K over a supply voltage range of 4 V to 30 V. The on-chip thin film resistor is laser adjusted and can be used to calibrate the device to output 298.2 μA of current at 298.2 K (25°C).

  Main applications: Remote detection applications

   CYTLP127(TP)   The Zuorui CYTLP127(TP) is a small SMD optocoupler for surface mount assembly.The CYTLP127 consists of a GaAs infrared light emitting diode and a Darlington phototransistor with integral base-emitter resistor to form a high voltage photocoupler with a VCEO of 300 V or more.

  Main applications: switching power supplies, smart meters, industrial control, measuring instruments, copiers and other office equipment, household appliances such as air conditioners, fans, water heaters, etc.

Prepare your supply chain

Buyers of electronic components must now be prepared for future prices, extended delivery time, and continuous challenge of the supply chain. Looking forward to the future, if the price and delivery time continues to increase, the procurement of JIT may become increasingly inevitable. On the contrary, buyers may need to adopt the "just in case" business model, holding excess inventory and finished products to prevent the long -term preparation period and the supply chain interruption.

As the shortage and the interruption of the supply chain continue, communication with customers and suppliers will be essential. Regular communication with suppliers will help buyers prepare for extension of delivery time, and always understand the changing market conditions at any time. Regular communication with customers will help customers manage the expectations of potential delays, rising prices and increased delivery time. This is essential to ease the impact of this news or at least ensure that customers will not be taken attention to the sudden changes in this chaotic market.

Most importantly, buyers of electronic components must take measures to expand and improve their supplier network. In this era, managing your supply chain requires every link to work as a cohesive unit. The distributor of the agent rather than a partner cannot withstand the storm of this market. Communication and transparency are essential for management and planning. In E-energy Holding Limited, we use the following ways to hedge these market conditions for customers:

Our supplier network has been reviewed and improved for more than ten years.

Our strategic location around the world enables us to access and review the company's headquarters before making a purchase decision.

E-energy Holding Limited cooperates with a well -represented testing agency to conduct in -depth inspections and tests before delivering parts to our customers.

Our procurement is concentrated in franchise and manufacturer direct sales.

Our customer manager is committed to providing the highest level of services, communication and transparency. In addition to simply receiving orders, your customer manager will also help you develop solutions, planned inventory and delivery plans, maintain the inventory level of regular procurement, and ensure the authenticity of your parts.

Add E-energy Holding Limited to the list of suppliers approved by you, and let our team help you make strategic and wise procurement decisions.

[electricsmart]

7CW MMBT2222A NPN switching transistor

7CW SMD Transistor MMBT2222A NPN switching transistor.

NPN switching transistor in a SOT23 plastic package. PNP complement: PMBT2907A.

FEATURES : 

High current (max. 600 mA)

Low voltage (max. 40 V). 

Switching and linear amplification.

MARKING CODE : 7CW

TYPE NUMBER : MMBT2222A  

LIMITING VALUES :

VCBO collector-base voltage open emitter − 75 V

VCEO collector-emitter voltage open base − 40 V

VEBO emitter-base voltage open collector − 6 V

IC collector current (DC) − 600 mA

ICM peak collector current − 800 mA

IBM peak base current − 200 mA

Ptot total power dissipation Tamb ≤ 25 °C; note 1 − 250 mW

Tstg storage temperature −65 +150 °C

Tj junction temperature − 150 °C

Tamb operating ambient temperature −65 +150 °C

7CW SMD Transistor Pinout :