#Pablo S. Herrero

[hitku]

by Pablo S. Herrero

[streetartusa]

If Stonemasons Could Talk

What would they say? From hand chiseling blocks of stone to shaping, polishing and leveling stones with the use of a wide range of sophisticated power tools, these unsung heroes have been romancing the stone since the ancient times, contributing to the development of historic and modern structures.  David de la Mano and Pablo S. Herrero pay tribute to these anonymous wizards by giving them a…

[jcmarchi]

New transistor’s superlative properties could have broad electronics applications

New Post has been published on https://thedigitalinsider.com/new-transistors-superlative-properties-could-have-broad-electronics-applications/

New transistor’s superlative properties could have broad electronics applications

In 2021, a team led by MIT physicists reported creating a new ultrathin ferroelectric material, or one where positive and negative charges separate into different layers. At the time they noted the material’s potential for applications in computer memory and much more. Now the same core team and colleagues — including two from the lab next door — have built a transistor with that material and shown that its properties are so useful that it could change the world of electronics.

Although the team’s results are based on a single transistor in the lab, “in several aspects its properties already meet or exceed industry standards” for the ferroelectric transistors produced today, says Pablo Jarillo-Herrero, the Cecil and Ida Green Professor of Physics, who led the work with professor of physics Raymond Ashoori. Both are also affiliated with the Materials Research Laboratory.

“In my lab we primarily do fundamental physics. This is one of the first, and perhaps most dramatic, examples of how very basic science has led to something that could have a major impact on applications,” Jarillo-Herrero says.

Says Ashoori, “When I think of my whole career in physics, this is the work that I think 10 to 20 years from now could change the world.”

Among the new transistor’s superlative properties:

It can switch between positive and negative charges — essentially the ones and zeros of digital information — at very high speeds, on nanosecond time scales. (A nanosecond is a billionth of a second.)

It is extremely tough. After 100 billion switches it still worked with no signs of degradation.

The material behind the magic is only billionths of a meter thick, one of the thinnest of its kind in the world. That, in turn, could allow for much denser computer memory storage. It could also lead to much more energy-efficient transistors because the voltage required for switching scales with material thickness. (Ultrathin equals ultralow voltages.)

The work is reported in a recent issue of Science. The co-first authors of the paper are Kenji Yasuda, now an assistant professor at Cornell University, and Evan Zalys-Geller, now at Atom Computing. Additional authors are Xirui Wang, an MIT graduate student in physics; Daniel Bennett and Efthimios Kaxiras of Harvard University; Suraj S. Cheema, an assistant professor in MIT’s Department of Electrical Engineering and Computer Science and an affiliate of the Research Laboratory of Electronics; and Kenji Watanabe and Takashi Taniguchi of the National Institute for Materials Science in Japan.

What they did

In a ferroelectric material, positive and negative charges spontaneously head to different sides, or poles. Upon the application of an external electric field, those charges switch sides, reversing the polarization. Switching the polarization can be used to encode digital information, and that information will be nonvolatile, or stable over time. It won’t change unless an electric field is applied. For a ferroelectric to have broad application to electronics, all of this needs to happen at room temperature.

The new ferroelectric material reported in Science in 2021 is based on atomically thin sheets of boron nitride that are stacked parallel to each other, a configuration that doesn’t exist in nature. In bulk boron nitride, the individual layers of boron nitride are instead rotated by 180 degrees.

It turns out that when an electric field is applied to this parallel stacked configuration, one layer of the new boron nitride material slides over the other, slightly changing the positions of the boron and nitrogen atoms. For example, imagine that each of your hands is composed of only one layer of cells. The new phenomenon is akin to pressing your hands together then slightly shifting one above the other.

“So the miracle is that by sliding the two layers a few angstroms, you end up with radically different electronics,” says Ashoori. The diameter of an atom is about 1 angstrom.

Another miracle: “nothing wears out in the sliding,” Ashoori continues. That’s why the new transistor could be switched 100 billion times without degrading. Compare that to the memory in a flash drive made with conventional materials. “Each time you write and erase a flash memory, you get some degradation,” says Ashoori. “Over time, it wears out, which means that you have to use some very sophisticated methods for distributing where you’re reading and writing on the chip.” The new material could make those steps obsolete.

A collaborative effort

Yasuda, the co-first author of the current Science paper, applauds the collaborations involved in the work. Among them, “we [Jarillo-Herrero’s team] made the material and, together with Ray [Ashoori] and [co-first author] Evan [Zalys-Geller], we measured its characteristics in detail. That was very exciting.” Says Ashoori, “many of the techniques in my lab just naturally applied to work that was going on in the lab next door. It’s been a lot of fun.”

Ashoori notes that “there’s a lot of interesting physics behind this” that could be explored. For example, “if you think about the two layers sliding past each other, where does that sliding start?” In addition, says Yasuda, could the ferroelectricity be triggered with something other than electricity, like an optical pulse? And is there a fundamental limit to the amount of switches the material can make?

Challenges remain. For example, the current way of producing the new ferroelectrics is difficult and not conducive to mass manufacturing. “We made a single transistor as a demonstration. If people could grow these materials on the wafer scale, we could create many, many more,” says Yasuda. He notes that different groups are already working to that end.

Concludes Ashoori, “There are a few problems. But if you solve them, this material fits in so many ways into potential future electronics. It’s very exciting.”

This work was supported by the U.S. Army Research Office, the MIT/Microsystems Technology Laboratories Samsung Semiconductor Research Fund, the U.S. National Science Foundation, the Gordon and Betty Moore Foundation, the Ramon Areces Foundation, the Basic Energy Sciences program of the U.S. Department of Energy, the Japan Society for the Promotion of Science, and the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan.

[persa-tra-i-miei-pensieri]

David De La Mano, Pablo S. Herrero, Hitnes, HERA, Gola Hundun, Airelav, Martin Whatson - Civitacampomarano

[sunaleisocial]

New transistor’s superlative properties could have broad electronics applications

New Post has been published on https://sunalei.org/news/new-transistors-superlative-properties-could-have-broad-electronics-applications/

New transistor’s superlative properties could have broad electronics applications

In 2021, a team led by MIT physicists reported creating a new ultrathin ferroelectric material, or one where positive and negative charges separate into different layers. At the time they noted the material’s potential for applications in computer memory and much more. Now the same core team and colleagues — including two from the lab next door — have built a transistor with that material and shown that its properties are so useful that it could change the world of electronics.

Although the team’s results are based on a single transistor in the lab, “in several aspects its properties already meet or exceed industry standards” for the ferroelectric transistors produced today, says Pablo Jarillo-Herrero, the Cecil and Ida Green Professor of Physics, who led the work with professor of physics Raymond Ashoori. Both are also affiliated with the Materials Research Laboratory.

“In my lab we primarily do fundamental physics. This is one of the first, and perhaps most dramatic, examples of how very basic science has led to something that could have a major impact on applications,” Jarillo-Herrero says.

Says Ashoori, “When I think of my whole career in physics, this is the work that I think 10 to 20 years from now could change the world.”

Among the new transistor’s superlative properties:

It can switch between positive and negative charges — essentially the ones and zeros of digital information — at very high speeds, on nanosecond time scales. (A nanosecond is a billionth of a second.)

It is extremely tough. After 100 billion switches it still worked with no signs of degradation.

The material behind the magic is only billionths of a meter thick, one of the thinnest of its kind in the world. That, in turn, could allow for much denser computer memory storage. It could also lead to much more energy-efficient transistors because the voltage required for switching scales with material thickness. (Ultrathin equals ultralow voltages.)

The work is reported in a recent issue of Science. The co-first authors of the paper are Kenji Yasuda, now an assistant professor at Cornell University, and Evan Zalys-Geller, now at Atom Computing. Additional authors are Xirui Wang, an MIT graduate student in physics; Daniel Bennett and Efthimios Kaxiras of Harvard University; Suraj S. Cheema, an assistant professor in MIT’s Department of Electrical Engineering and Computer Science and an affiliate of the Research Laboratory of Electronics; and Kenji Watanabe and Takashi Taniguchi of the National Institute for Materials Science in Japan.

What they did

In a ferroelectric material, positive and negative charges spontaneously head to different sides, or poles. Upon the application of an external electric field, those charges switch sides, reversing the polarization. Switching the polarization can be used to encode digital information, and that information will be nonvolatile, or stable over time. It won’t change unless an electric field is applied. For a ferroelectric to have broad application to electronics, all of this needs to happen at room temperature.

The new ferroelectric material reported in Science in 2021 is based on atomically thin sheets of boron nitride that are stacked parallel to each other, a configuration that doesn’t exist in nature. In bulk boron nitride, the individual layers of boron nitride are instead rotated by 180 degrees.

It turns out that when an electric field is applied to this parallel stacked configuration, one layer of the new boron nitride material slides over the other, slightly changing the positions of the boron and nitrogen atoms. For example, imagine that each of your hands is composed of only one layer of cells. The new phenomenon is akin to pressing your hands together then slightly shifting one above the other.

“So the miracle is that by sliding the two layers a few angstroms, you end up with radically different electronics,” says Ashoori. The diameter of an atom is about 1 angstrom.

Another miracle: “nothing wears out in the sliding,” Ashoori continues. That’s why the new transistor could be switched 100 billion times without degrading. Compare that to the memory in a flash drive made with conventional materials. “Each time you write and erase a flash memory, you get some degradation,” says Ashoori. “Over time, it wears out, which means that you have to use some very sophisticated methods for distributing where you’re reading and writing on the chip.” The new material could make those steps obsolete.

A collaborative effort

Yasuda, the co-first author of the current Science paper, applauds the collaborations involved in the work. Among them, “we [Jarillo-Herrero’s team] made the material and, together with Ray [Ashoori] and [co-first author] Evan [Zalys-Geller], we measured its characteristics in detail. That was very exciting.” Says Ashoori, “many of the techniques in my lab just naturally applied to work that was going on in the lab next door. It’s been a lot of fun.”

Ashoori notes that “there’s a lot of interesting physics behind this” that could be explored. For example, “if you think about the two layers sliding past each other, where does that sliding start?” In addition, says Yasuda, could the ferroelectricity be triggered with something other than electricity, like an optical pulse? And is there a fundamental limit to the amount of switches the material can make?

Challenges remain. For example, the current way of producing the new ferroelectrics is difficult and not conducive to mass manufacturing. “We made a single transistor as a demonstration. If people could grow these materials on the wafer scale, we could create many, many more,” says Yasuda. He notes that different groups are already working to that end.

Concludes Ashoori, “There are a few problems. But if you solve them, this material fits in so many ways into potential future electronics. It’s very exciting.”

This work was supported by the U.S. Army Research Office, the MIT/Microsystems Technology Laboratories Samsung Semiconductor Research Fund, the U.S. National Science Foundation, the Gordon and Betty Moore Foundation, the Ramon Areces Foundation, the Basic Energy Sciences program of the U.S. Department of Energy, the Japan Society for the Promotion of Science, and the Ministry of Education, Culture, Sports, Science and Technology (MEXT) of Japan.

[julio-viernes]

Y un pequeño tributo también a Pablo Herrero, mitad compositiva junto a José Luis Herreros de Los Relámpagos y coautor con él de grandes éxitos del pop español tales como "Cuéntame", "Tengo Tu Amor", "América", "Libre" o "La Estrella de David", entre muchísimas otras en una lista de créditos impresionante. Le recordamos con dos curiosidades que no definen al famoso grupo instrumental: "Bwana", en la onda Booker T. & The MG´s, el último single que grabaron para Zafiro- Novola en 1968, y la cara B del primer sencillo para el sello RCA en 1969, "Ferrocarril de Montaña", ésta un poco Tornados.

[barbarapicci]

Streetart by David de la Mano + Pablo S. Herrero @ Winter Haven, Florida, USA

More pics at: https://barbarapicci.com/2023/09/08/streetart-david-de-la-mano-pablo-s-herrero-winter-haven-florida-usa/

[nedsecondline]

Streetart – David de la Mano + Pablo S. Herrero @ Winter Haven, Florida, USA

David de la Mano + Pablo S. Herrero @ Winter Haven, Florida, USA David de la Mano + Pablo S. Herrero @ Winter Haven, Florida, USA David de la Mano + …Streetart – David de la Mano + Pablo S. Herrero @ Winter Haven, Florida, USA

[mypdf]

Lista lojas adquiridas pela Auchan Espanha ao Grupo DIA

------------------------------------------------Lista 224 establecimientos Dia

---------------------------------------ARAGÓN

ZARAGOZA-Plaza Madres de la Plaza de Mayo; Madre Sacramento, 28-30; calle Tarragona, 32; autovía Logroño 57-61; carretera Madrid; avenida Cataluña, 25- 27; paseo María Agustín, 97-99; calle Adolfo Aznar, 6-10; Cuartel, 1; avenida Pablo Neruda, 20; paseo Fernando el Católico, 52; calle Daroca, 79; Rebolería, 14; Monse Domingo Aguado, 21- 23; calle Salvador Allende, 38-40; calle Eugenio Lucas, 1; Cesáreo Alierta, 33- 35; paseo Damas, 33; Zaragoza la Vieja, 4; Inocencio Ruiz Lasaja, 40; La Vía 17 y paseo de Justicia, 3 (Fuentes de Ebro).

------------------------------------------------------------------------------

TERUEL. Avenida Zaragoza, 22.

CALATAYUD. Plaza España, 15- 19.

CALAMOCHA. Calle El Cañizarejo, 18

ANDORRA. Polígono La Umbría 9-11

ALCAÑIZ. Avenida Bartolomé Esteban s/n

UTRILLAS. Avenida Velasco, 25-29

PEDROLA. Calle Zaragoza, 25

ÉPILA. Carretera Muel-Lumpiaque, 56

ALAGÓN. Avenida Zaragoza, 2

CARIÑENA. Calle La Cruz, 4

TARAZONA. Avenida de la Paz

------------------------------------------------------------------------------

ASTURIAS

GIJÓN. Calle Fernando VI, 2; Torrecerredo; Marqués de Urquijo, número 15; Cataluña, 5; Carretera del Obispo, 59-61; y calle Meléndez Pelayo, 17-19.

OVIEDO. Calle Bermúdez de Castro, 23; Plaza de América, 2; Gil de Jaz, 9; Torrecerredo, 17; y calle González Besada, número 15.

AVILÉS. Avenida San Agustín, 13.

PARRES. Calle Juan Carlos I, número 1.

ALLER. Calle Travesía Humanitarios s/n.

CANGAS DE NARCEA. Calle Uría, 32

CARREÑO. San Antonio, 5.

CATRILLÓN. Plaza de la Constitución, 4.

GRADO. Travesía Florez Estrada, 27.

LANGREO. Calle El Dorado, 8.

LAVIANA. Calle Mariano Menéndez Valdés.

LLANES. Carretera del Monasterio San Antolín y calle Manuel Román, 3.

MUROS DE NALÓN. Avenida de Toledo, 3.

PILOÑA. Calle García Carbajal, 5.

PRAVIA. Avenida Santiago López, 1.

SAN MARTÍN DEL REY AURELIO. Calle Jaime Escandón, 6.

SIERO. Calle Ildefonso Sánchez del Río, 13.

VALDÉS. Calle García Prieto, 10.

VILLAVICIOSA. Calle Magdalena, 11.

VEGADEO. Hermanos Fernández de la Vega, 3.

CANTABRIA

SANTANDER. Calle San Fernando, 82; calle Santa Lucia, 31.

TORRELAVEGA. Calle Augusto García Linares, número 4; Avenida Solvay, 51, y Avenida Bolbao (Los Ochos).

------------------------------------------------CASTILLA LA MANCHA

GUADALAJARA. Avenida Virgen de la Soledad, 29.

------------------------------------------------CASTILLA Y LEÓN

ÁVILA. Ávila, Avda Juan Carlos I, s/n

BURGOS. Mercado Sur, calle Miranda, 10; calle Clunia, 13; calle Juan de Padilla, 11; calle Andrés Martínez Zatorre, 5 y 7, y calle Calzadas, 15 y 17.

LEÓN. Avenida Reyes Leoneses, 27; Santa Nonia, 16; San Ignacio de Loyola, 40 y La Puentecilla, 35.

SALAMANCA. Plaza La Fuente, 15; paseo Canalejas Bajo, 57; carretera Ledesma, 66; calle Alonso del Castillo, s/n; avenida Italia, 6; avenida Portugal 90; plaza de Madrid, 11-13; avenida Federico Anaya, 62; paseo del Rollo, 40; y calle Joaquín Rodrigo, 75.

VALLADOLID. Calle Balago,5; Portillo de Balboa, 4; Avenida de Palencia, 14; Doctor Montero, 5; Paseo de Zorrilla, 84 y Plaza de San Juan.

PALENCIA. Calle Manuel Rivera (Cantigas); avenida Asturias con carretera 3 Pasos, 12; y calle Mayor Principal, 91.

SORIA. Calle Alfonso VIII,8 (Duques de Soria c/v Medinaceli y calle López Yanguas, 1.

ZAMORA. Avenida Tres Cruces, 24 y calle República Argentina, 12.

ARANDA DEL DUERO. Calle San Francisco, 26; calle Pizarro, 16 y 18; Avenida Castilla, 20; calle Miranda de Douro, 1, y plaza Gallocanta.

BENAVENTE. Calle Herreros San Antón, 38, 59 y 61.

MIRANDA DEL EBRO. Plaza de Dia de la República Argentina, 55.

BRIVIESCA. calle Justo Cantón Salazar, 30.

MEDINA DE POMAR. Plaza de Dia de la avenida Santander, 10 y 12.

ASTORGA. Calle Alcalde Pineda, 31; Cistierna (avenida Constitución, 119); La Robla (calle Josefina Rodríguez Aldecoa, 9); Bembibre (calle Eloy Reigada, 25); San Andrés del Rabanedo (calle Colada, 7,11) y Villablino (avenida Constitución, 11).

PONFERRADA. Avenida América con calle Los Andes, 27; y avenida del Castilla, 8.

BÉJAR. Calle Recreo con calle Gibraleón, 10; calle Yurramendi, s/n (Ciudad Rodrigo) y calle San Marcos, 9 (Guijuelo).

TUDELA DE DUERO. Plaza Pablo Arranz, 15.

LAGUNA DE DUERO. Avenida del Estadio.

VILLANUBLA. Almacén de productos secos y de pescado.

AGUILAR DE CAMPOO. Calle Comercio, 4-6.

------------------------------------------------MADRID (COMUNIDAD)

MADRID. Avenida Bucaramanga, 2; calle Atocha, 80; Príncipe de Vergara, 197; paseo Ermita del Santo, 48; Avenida Francisco Pi y Margall, 37; calle Urugua, 16; Sor Ángela de la Cruz; Francisco Silvela, 44; calle Marqués Lozoya s/n; Alonso Carbonell; Doce de octubre, 20; Albala, 7; plaza Perú; Cerro de Carrasqueta, 134; calle Galapa, 2; Sierra vieja, 78; paseo de la Dirección 348-350; Lagasca, 51; Nuestra Señora del Carmen, 22 y Ribera de Curtidores, 15.

LAS ROZAS. Calle Kalamos s/n.

BOADILLA DEL MONTE. Calle Monteamar y Avenida Condena de Chinchón.

MÓSTOLES: Calle Libertad 38; Avenida Dos de Mayo, 62, y Simón Hernández, 53.

POZUELO. Calle Barlovento, 1, y Portugal, 4.

VILLANUEVA DE LA CAÑADA. Avenida Sierra de Gredos, 2.

ALCALÁ DE HENARES. Plaza de San José, 2.

GETAFE. Calle Ferrocarril, 10.

LEGANÉS. Calle Andrés de Ahumada, 4.

DAGANZO DE ARRIBA. Avenida Circunvalación s/n.

ARANJUEZ. Calle Abastos, 5.

RIVAS VACIAMADRID. Calle Lego Garda.

FUENLABRADA. Calle Alegría, 4, y calle Leganés.

SAN FERNANDO DE HENARES. Avenida de Somorrostro, 46, y Nazario Calonge s/n.

SAN SEBASTIÁN DE LOS REYES. Calle Salvador de Madariaga y Avenida de Somorrostro, 46.

TRES CANTOS. Plaza del Toro, 1.

------------------------------------------------GALICIA

A CORUÑA. Boiro, Principal, S/N; Ca Baños, Arteixo-Nave 8; Carballo, Rua Vazquez Parga- Esq Pedreira S/N; Fene, Ctra. de La Palma; el Penedo; Ferrol, Ctra. Catabois, 477; Narón, Ctra. De Castilla, Km 692; Noia, Ctra. De Loxe, s/n; Oleiros, Avda. Rosalia de Castro; Santiago de Compostela, Rua de Amio, 114.

LUGO.Burela, Arcadio Pardiñas, 204; Lugo, Avda. Coruña, 462-464; Monforte de Lemos, Bento vicetto, s/n; Viveiro, Misericordia, 20.

OURENSE. Carballiño, O Ctra. Ourense s/n; Ourense, Rua Ponte Sevilla, 1; Verín, Ctra N-525 Cruce Castelo, s/n.

PONTEVEDRA. Vilagarcía de Arousa, Carretera de Cambados Torres San Cibrán; Cangas, Avenida Xose María Castroviejo s/n; Estrada, Avenida Benito Vigo, 193; Vigo, Avenida Buenos Aries, 33- 35; Mos, calle Areas, 7; Pontevedra, Cr. N 550 - Lugar De Alba; Sansenxo, Bo Lugar Vinquiño-Patronal, s/n.

------------------------------------------------NAVARRA

ANSOAIN. Cl Hermanos Noain, 50.

ESTELLA - LIZARRA. Merkatondoa

------------------------------------------------PAÍS VASCO

VIZCAYA. Arrankudiaga, Barrio Zuloaga, s/n; Barakaldo, C/Ibaibe, 38: Forua, Paseo Carlos Gangoiti, 85.

GUIPÚZCOA. Arrasate / Mondragón, B San Andrés 7 Bis; Astigarraga, Aiotzategui de Ergoiba, 18-20: Bergara, Haitz iturri, 2; Elgoibar, C/ Zizilion. Pol. Ind. Sigma Pab. A 13; Errenteria, Crta. Nacional I, Km 465; Hernani, La florida, 34; Hondarribia, C/Girizi, 2; Irún, Cl Pozuetakogaina 17; Legazpi, El barrena, 18-a; Ordizia, Ctra. Zaldibia, 1.

[henk-heijmans]

Streets of Uruguay, 2012 - by Pablo S. Herrero & David de la Mano, Uruguayan

[urhajos]

Pablo S. Herrero

[gacougnol]

Pablo S. Herrero La Burbuja Chinese Ink and Watercolor

[ghoti-and-us]

David de la Mano & Pablo S. Herrero

[hitku]

- Pablo S. Herrero

[the-cinder-fields]

Artist: Pablo S. Herrero, 2012

[mybeingthere]

Spanish street artist, Pablo S. Herrero is known for his huge murals, but he also paints charming watercolours and inks of trees and woods.

 https://pablosherrero.com/

https://www.instagram.com/pablosherrero/?hl=en